DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3458
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3458 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
ORDERING INFORMATION
PART NUMBER
2SK3458
2SK3458-S
2SK3458-ZK
PACKAGE
TO-220AB
TO-262
TO-263
FEATURES
•
Low gate charge
Q
G
= 25 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 6.0 A)
•
Gate voltage rating
±30
V
•
Low on-state resistance
R
DS(on)
= 2.2
Ω
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
•
Avalanche capability ratings
•
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
800
±30
±6.0
±24
1.5
100
150
–55 to +150
6.0
66.5
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
¡
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14755EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2000
2SK3458
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 450 V
V
GS
= 10 V
I
D
= 6.0 A
I
F
= 6.0 A, V
GS
= 0 V
I
F
= 6.0 A, V
GS
= 0 V
di/dt = 50 A/
µ
s
TEST CONDITIONS
V
DS
= 800 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 3.0 A
V
GS
= 10 V, I
D
= 3.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 150 V, I
D
= 3.0 A
V
GS
= 10 V
R
G
= 10
Ω
2.5
2.0
1.8
1220
170
16
17
7
43
11
25
6
10
1.0
1490
7.5
2.2
MIN.
TYP.
MAX.
100
±100
3.5
UNIT
µ
A
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
G
= 10
Ω
V
GS
R
L
V
DD
I
D
90%
90%
I
D
D
Wave Form
GS
Wave Form
V
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
0
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
10%
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14755EJ1V0DS
2SK3458
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
80
P
T
- Total Power Dissipation - W
80
60
60
40
40
20
20
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
PW
=
I
D
- Drain Current - A
10
10
d
ite
im
L
n)
I
D(DC)
10
10
0
1
m
s
µ
s
µ
s
1
R
(o
DS
m
s
30 ms
DC
Power Dissipation Limited
0.1
1
T
C
= 25˚C
Single Pulse
10
100
V
DS
- Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 83.3˚C/W
10
R
th(ch-C)
= 1.25˚C/W
1
0.1
0.01
10
µ
Single Pulse
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14755EJ1V0DS
3
2SK3458
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
9
1000
Pulsed
V
DS
= 10 V
100
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
7
6
5
4
3
2
1
0
0
5
10
15
20
V
GS
= 10 V
I
D
- Drain Current - A
8
10
1
T
A
=
−50°C
−25°C
25°C
75°C
125°C
150°C
0.1
0.01
0.001
0
5
10
15
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
T
A
=
−50°C
−25°C
25°C
75°C
125°C
150°C
4.0
V
GS(off)
– Gate Cut-off Voltage - V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
1
0.1
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance -
Ω
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1
10
100
V
GS
= 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0
5
10
15
20
25
V
GS
- Gate to Source Voltage - V
I
D
= 6.0 A
3.0 A
1.2 A
I
D
- Drain Current - A
4
Data Sheet D14755EJ1V0DS
2SK3458
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
5.0
4.5
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
I
D
= 6.0 A
3.0 A
C
iss
1000
100
C
oss
10
V
GS
= 0 V
f = 1 MHz
1
0.1
1
10
100
1000
C
rss
T
ch
- Channel Temperature -
°C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
700
600
500
400
300
200
100
0
0.1
1
10
100
0
5
10
15
20
25
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
14
V
DD
= 450 V
300 V
150 V
12
10
8
V
GS
6
4
V
DS
2
0
V
GS
- Gate to Source Voltage - V
I
D
= 6.0 A
100
t
d(off)
t
d(on)
10
t
f
t
r
1
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
10000
100
t
rr
- Reverse Recovery Time - ns
I
SD
- Diode Forward Current - A
10
1000
1
V
GS
= 10 V
100
0.1
0V
di/dt = 50 A/
µs
V
GS
= 0 V
0.01
0
0.5
1
1.5
V
SD
- Source to Drain Voltage - V
Data Sheet D14755EJ1V0DS
10
0.1
1
10
100
I
F
- Drain Current - A
5
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