DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3482
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3482 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3482
2SK3482-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 33 mΩ MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 39 mΩ MAX. (V
GS
= 4.5 V, I
D
= 18 A)
•
Low C
iss
: C
iss
= 3600 pF TYP.
•
Built-in gate protection diode
•
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, R
G
= 25
Ω
,
V
GS
= 20
→
0 V
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
100
±20
±36
±100
50
1.0
150
–55 to +150
30
90
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15064EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
2SK3482
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 100 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 18 A
V
GS
= 10 V, I
D
= 18 A
V
GS
= 4.5 V, I
D
= 18 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 50 V, I
D
= 18 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
12
2.0
23
27
29
3600
360
190
15
10
68
6
2.5
Drain to Source On-state Resistance
33
39
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 80 V
V
GS
= 10 V
I
D
= 36 A
I
F
= 36 A, V
GS
= 0 V
I
F
= 36 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
72
10
19
1.0
70
180
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet
D15064EJ2V0DS
2SK3482
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF
SAFE OPERATING AREA
120
FORWARD
BIAS
60
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
T
C
- Case Temperature -
°C
I
D(pulse)
= 100 A
I
D
- Drain Current - A
100
10
d
ite V)
m 10
Li =
)
on
S( GS
R
D
at V
(
I
D(DC)
= 36 A
PW
µ
s
10
0
DC
=
10
µ
s
10
1
m
s
m
s
1
Po
Lim we
ite r Di
d ss
ipa
tio
n
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
Channel to Ambient
10
R
th(ch-A)
= 125˚C/W
R
th(ch-C)
= 2.5˚C/W
1
Channel to Case
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet
D15064EJ2V0DS
3
2SK3482
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
90
80
70
V
GS
= 10 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
100
10
4.5 V
I
D
- Drain Current - A
60
50
40
30
20
10
0
0
1
2
3
4
5
I
D
- Drain Current - A
1
T
A
= 150°C
75°C
-25°C
-40°C
0.1
V
DS
= 10 V
Pulsed
0.01
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
GS(off)
– Gate Cut-off Voltage - V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
| y
fs
| - Forward Transfer Admittance - S
V
SD
= 10 V
I
D
= 1mA
10
T
A
= 15 0 °C
7 5°C
2 5 °C
-4 0 ° C
1
0 .1
V
DS
= 10V
P u ls e d
100 125 150
0 .0 1
0 .0 1
0 .1
1
10
100
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
70
P u ls e d
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
18
20
7.2 A
I
D
= 36 A
18 A
Pulsed
60
50
40
30
20
10
0
0 .1
1
10
100
V
G S
= 4 .5 V
10 V
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet
D15064EJ2V0DS
2SK3482
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
70
60
50
V
GS
= 4.5 V
Pulsed
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
C
iss
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
oss
1000
40
10 V
C
rss
30
20
10
0
-50
-25
0
25
50
75
100 125 150
100
V
GS
= 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
SWITCHING CHARACTERISTICS
1000
V
DD
= 50 V
V
G S
= 10 V
R
G
= 0
Ω
t
d(off)
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
90
I
D
= 36 A
V
DD
= 80 V
50 V
20 V
10
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
80
70
60
50
40
30
20
10
0
0
10
20
V
GS
8
100
6
td(on)
4
10
t
r
2
V
DS
1
0.1
1
10
100
0
30
40
50
60
70
80
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
V
GS
= 10 V
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
di/dt = 100 A/
µ
s
V
GS
= 0 V
10
0V
t
rr
- Reverse Recovery Time - ns
I
SD
- Diode Forward Current - A
100
1
10
0.1
Pulsed
0.01
0.0
1
0.5
1.0
1.5
0.1
1
10
100
V
SD
- Source to Drain Voltage - V
I
F
- Drain Current - A
Data Sheet
D15064EJ2V0DS
5
V
GS
- Gate to Drain Voltage - V
t
f
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