DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3484
2SK3484-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 125 mΩ MAX. (V
GS
= 10 V, I
D
= 8 A)
R
DS(on)2
= 148 mΩ MAX. (V
GS
= 4.5 V, I
D
= 8 A)
•
Low C
iss
: C
iss
= 900 pF TYP.
•
Built-in gate protection diode
•
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
100
±20
±16
±22
30
1.0
150
–55 to +150
10
10
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 50 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
4.17
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15069EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
2SK3484
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 100 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 8 A
V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 50 V, I
D
= 8 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
4.7
2.0
9.5
100
110
900
110
50
9.0
5.0
30
4.0
2.5
Drain to Source On-state Resistance
125
148
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 80 V
V
GS
= 10 V
I
D
= 16 A
I
F
= 16 A, V
GS
= 0 V
I
F
= 16 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
20
3.0
5.0
1.0
60
122
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D15069EJ2V0DS
2SK3484
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
P
T
- Total Power Dissipation - W
100
80
60
40
20
40
30
20
10
0
20
40
60
80
100
120 140 160
0
0
20
40
60
80
100 120 140 160
T
C
- Case Temperature -
˚C
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
10
µ
s
I
D(DC)
I
D
- Drain Current - A
R
(a
DS(
t V
on)
G
Li
S
= mit
10 ed
V)
10
DC
10
0
µ
s
iss
rD
we d
Po mite
Li
ipa
1
m
s
10
m
tio
n
s
1
0.1
0.1
T
C
= 25˚C
Single Pulse
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
˚C/W
100
R
th(ch-A)
= 125˚C/W
10
R
th(ch-C)
= 4.17˚C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15069EJ2V0DS
3
2SK3484
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
V
DS
= 10 V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
10
I
D
- Drain Current - A
20
V
GS
=10 V
15
4.5 V
1
T
A
=
−40˚C
25˚C
75˚C
150˚C
10
1
0.1
5
Pulsed
0
1
2
3
4
V
DS
- Drain to Source Voltage - V
0.01
1
2
3
4
5
0
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
150
I
D
= 16 A
100
8A
50
100 V
DS
= 10 V
Pulsed
10
T
A
= 150˚C
75˚C
25˚C
−40˚C
1
0.1
0.01
0.01
0
0.1
1
10
100
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
250
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
V
DS
= 10 V
I
D
= 1 mA
200
3
150
V
GS
= 4.5 V
100
10 V
2
1
50
0
0.1
1
10
100
0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
˚C
4
Data Sheet D15069EJ2V0DS
2SK3484
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
300
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
Pulsed
I
D
= 8 A
10
V
GS
= 10 V
0V
200
V
GS
= 4.5 V
10 V
100
1
0.1
0
−50
0
50
100
150
0.01
0
0.5
1
1.5
T
ch
- Channel Temperature -
˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 0 V
f = 1 MHz
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
Ω
t
f
1000
C
iss
100
t
d(off)
t
d(on)
100
C
oss
10
t
r
1
0.1
1
10
0.01
0.1
1
10
C
rss
100
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
V
DS
- Drain to Source Voltage - V
80
100
V
DD
= 80 V
50 V
20 V
8
V
GS
6
60
40
4
10
20
V
DS
I
D
= 16 A
0
5
10
15
20
2
1
0.1
1
10
100
0
25
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D15069EJ2V0DS
V
GS
- Gate to Drain Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
10
5
京公网安备 11010802033920号
EEWORLD
