DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK3503 is an N-channel vertical MOS FET. Because it can be
driven by a voltage as low as 1.5 V and it is not necessary to consider
a drive current, this FET is ideal as an actuator for low-current portable
systems such as headphone stereos and video cameras.
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
FEATURES
•
Automatic mounting supported
•
Gate can be driven by a 1.5 V power source
•
Because of its high input impedance, there’s no need to
consider a drive current
•
Since bias resistance can be omitted, the number of
components required can be reduced
1.6 ± 0.1
0.8 ± 0.1
3
0 to 0.1
2
0.2
+0.1
–0
0.5
0.5
0.6
0.75 ± 0.05
1
1.0
1.6 ± 0.1
ORDERING INFORMATION
PART NUMBER
2SK3503
PACKAGE
SC-75 (USM)
1: Source
2: Gate
3: Drain
Marking: E1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS =
0 V)
Gate to Source Voltage (V
DS =
0 V)
Drain Current (DC) (Tc = 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
16
±7.0
±0.1
±0.4
200
150
–55 to +150
V
V
A
A
mW
°C
°C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
C
= 25°C)
Note2
Channel Temperature
Storage Temperature
Gate
Body
Diode
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 3.0 cm
2
×
0.64 mm
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15395EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
2SK3503
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
P
T
- Total Power Dissipation - mW
Mounted on ceramic substrate
of 3.0 cm
2
x 0.64 mm
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
2.0 V
40
I
D
- Drain Current - mA
Pulsed
200
160
120
80
40
1.8 V
30
20
1.6 V
10
1.4 V
V
GS
= 1.2 V
0
30
60
90
120 150 180
T
A
- Ambient Temperature - ˚C
210
0
2
3
4
1
V
DS
- Drain to Source Voltage - V
5
R
DS(on)
- Drain to Source On-state Resistance -
Ω
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
500
|y
fs
| - Forward Transfer Admittance - mS
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
200
T
A
= –25˚C
Pulsed
100
50
V
GS
= 1.5 V
20
10
2.5 V
5
0.5
1
2
5
4.0 V
10
20
50 100 200
500
V
DS
= 3.0 V
Pulsed
T
A
= –25˚C
25˚C
75˚C
200
100
50
20
10
5
10
20
50
100
I
D
- Drain Current - mA
200
I
D
- Drain Current - mA
T
A
= 75˚C
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
200
100
50
T
A
= 25˚C
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
200
100
50
V
GS
= 1.5 V
T
A
= 75˚C
Pulsed
20
10
5
V
GS
= 1.5 V
20
10
5
2.5 V
4.0 V
2.5 V
4.0 V
0.5
1
2
5
10
20
50 100 200
500
0.5
1
2
5
10
20
50 100 200
500
I
D
- Drain Current - mA
Data Sheet D15395EJ2V0DS
I
D
- Drain Current - mA
3
2SK3503
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
T
A
= – 25˚C
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
T
A
= 25˚C
Pulsed
20
I
D
= 10 mA
1 mA
20
I
D
= 10 mA
1 mA
10
10
0
2
3
4
5
6
1
V
GS
- Gate to Source Voltage - V
7
0
1
2
3
4
5
6
V
GS
- Gate to Source Voltage - V
7
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
T
A
= 75˚C
Pulsed
200
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
V
GS
= 0 V
Pulsed
I
SD
- Diode Forward Current - mA
100
50
20
10
5
2
1
0
20
I
D
= 10 mA
1 mA
10
0
1
2
3
4
5
6
V
GS
- Gate to Source Voltage - V
7
0.2
0.4
0.6
0.8
V
SD
- Source to Drain Voltage - V
1.0
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
50
500
SWITCHING CHARACTERISTICS
V
DD
= 3.0 V
V
GS
= 3.0 V
R
G
= 10
Ω
200
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
rss
, C
oss
, - Capacitance - pF
V
GS
= 0 V
f = 1 MHz
20
10
5
t
r
C
iss
C
oss
100
50
t
f
t
d(on)
20
t
d(off)
2
1
C
rss
0.5
1
2
5
10
20
V
DS
- Drain to Source Voltage - V
50
10
20
50
100
200
I
D
- Drain Current - mA
500
4
Data Sheet D15395EJ2V0DS
2SK3503
•
The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
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•
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•
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•
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