DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
a low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3507-ZK
PACKAGE
TO-252 (MP-3ZK)
FEATURES
•
4.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 45 mΩ MAX. (V
GS
= 10 V, I
D
= 11 A)
•
Low gate charge
Q
G
= 8.5 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 22 A)
•
Built-in G-S protection diode
•
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±16
±22
±45
20
1.5
150
−55
to +150
10
10
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2001
2SK3507
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±16
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 4.0 V, I
D
= 11 A
V
GS
= 10 V, I
D
= 11 A
V
GS
= 4.5 V, I
D
= 11 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 11 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
6
28
46
360
125
65
6.6
3.6
16
5.3
2.5
Drain to Source On-state Resistance
45
76
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 24 V
V
GS
= 10 V
I
D
= 22 A
I
F
= 22 A, V
GS
= 0 V
I
F
= 22 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
8.5
2
2.1
1.0
31
26
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D15387EJ1V0DS
2SK3507
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
P
T
- Total Power Dissipation - W
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
I
D(DC)
PW = 10
µs
I
D
- Drain Current - A
10
R
DS(on)
Limited
(at V
GS
= 10 V)
DC
100
µs
Power Dissipation Limited
1 ms
10 ms
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 83.3°C/W
100
10
R
th(ch-C)
= 6.25°C/W
1
0.1
Single pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet D15387EJ1V0DS
3
2SK3507
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
60
50
I
D
- Drain Current - A
I
D
- Drain Current - A
100
V
GS
= 10 V
40
7V
30
20
4.5 V
10
Pulsed
0
0
1
2
3
4
5
6
V
DS
- Drain to Source Voltage - V
10
T
A
=
−55°C
25°C
75°C
150°C
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
1
0.1
0.01
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
T
ch
- Channel Temperature -
°C
100
V
DS
= 10 V
I
D
= 1 mA
10
T
A
=
−55°C
25°C
75°C
150°C
1
V
DS
= 4.0 V
Pulsed
0.1
0.01
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
140
120
100
80
60
40
20
0
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
120
100
80
60
40
20
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
I
D
= 11 A
Pulsed
V
GS
= 4.5 V
7V
10 V
0.1
1
10
100
I
D
- Drain Current - A
4
Data Sheet D15387EJ1V0DS
2SK3507
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
80
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
I
D
= 11 A
Pulsed
60
V
GS
= 4.5 V
V
GS
= 0 V
f = 1 MHz
1000
C
iss
100
C
oss
C
rss
10
0.01
40
7V
10 V
20
0
-50
0
50
100
150
T
ch
- Channel Temperature - °C
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
30
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
12
V
DS
= 24 V
15 V
6V
10
8
V
GS
6
4
V
DS
I
D
= 22 A
2
0
0
1
2
3
4
5
6
7
8
9
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
25
20
15
10
5
0
100
t
d(off)
10
t
d(on)
t
r
1
0.1
1
10
100
I
D
- Drain Current - A
t
f
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
I
F
- Diode Forward Current - A
1000
V
GS
= 10 V
10
0V
1
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/µs
V
GS
= 0 V
100
10
0.1
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
1
0.1
1
10
100
I
F
- Diode Forward Current - A
Data Sheet D15387EJ1V0DS
5
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