DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3511
2SK3511-S
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super low on-state resistance:
R
DS(on)
= 12.5 mΩ MAX. (V
GS
= 10 V, I
D
= 42 A)
•
Low C
iss
: C
iss
= 5900 pF TYP.
•
Built-in gate protection diode
2SK3511-ZJ
2SK3511-Z
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
75
±20
±83
±260
100
1.5
150
–55 to +150
52
250
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 35 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A
)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15617EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
2SK3511
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 60 V
V
GS
= 10 V
I
D
= 83 A
I
F
= 83 A, V
GS
= 0 V
I
F
= 83 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 75 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 42 A
V
GS
= 10 V, I
D
= 42 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 38 V, I
D
= 42 A
V
GS
= 10 V
R
G
= 0
Ω
2.0
21
3.0
45
9.5
5900
810
400
30
21
72
12
100
24
35
1.1
70
200
12.5
MIN.
TYP.
MAX.
10
±10
4.0
UNIT
µ
A
µ
A
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D15617EJ1V0DS
2SK3511
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
dT - Percentage of Rated Power - %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
P
T
- Total Power Dissipation - W
T
C
- Case Temperature -
°C
1000
I
D(DC)
I
D(pulse)
=1
0
µ
10
s
0
µ
s
1m
s
10
m
s
I
D
- Drain Current - A
100
ited
im V
)
L
n
10
S(o
R
D
GS
=
at V
PW
DC
10
Power Dissipation Limited
1
T
C
= 25˚C
Single Pulse
10
1
V
DS
- Drain to Source Voltage - V
100
0.1
0.1
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
10
R
th(ch-A)
= 83.3˚C/W
1
R
th(ch-C)
= 1.25˚C/W
0.1
0.01
10
µ
Single Pulse
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15617EJ1V0DS
3
2SK3511
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
300
Pulsed
250
V
GS
= 10 V
I
D
- Drain Current - A
1000
V
D S
= 10 V
100
I
D
- Drain Current - A
200
150
100
50
0
0
1
2
3
4
5
6
7
8
10
T
A
= 150°C
75°C
25°C
−55°C
1
2
3
4
5
6
7
1
0.1
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4.0
V
GS(off)
– Gate Cut-off Voltage - V
100
| y
fs
| - Forward Transfer Admittance - S
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
175
V
DS
= 10 V
I
D
= 1 mA
V
DS
= 10 V
Pulsed
10
1
T
A
= 150°C
75°C
25°C
−55°C
0.1
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
18
16
14
12
10
8
6
4
2
0
0.1
1
10
100
1000
V
GS
= 10 V
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
V
GS
- Gate to Source Voltage - V
Pulsed
I
D
= 42 A
I
D
- Drain Current - A
4
Data Sheet D15617EJ1V0DS
2SK3511
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
25
Pulsed
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
Ciss
20
1000
15
Coss
Crss
10
100
5
V
GS
= 10 V
I
D
= 42 A
0
-100
-50
0
50
100
150
200
V
GS
= 0 V
f = 1 MHz
10
0.1
1
10
100
T
ch
- Channel Temperature -
°C
SWITCHING CHARACTERISTICS
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
t
f
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
80
60
100
t
d(off)
t
d(on)
t
r
6
V
GS
4
V
DS
I
D
= 83 A
2
0
120
40
20
0
0
20
40
60
80
100
10
V
DD
= 38 V
V
GS
= 10 V
R
G
= 0
Ω
1
10
100
1
0.1
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs. DRAIN CURRENT
Pulsed
100
100
10
V
GS
= 10 V
1
0V
0.1
t
rr
- Reverse Recovery Time - ns
I
SD
- Diode Forward Current - A
0.01
V
GS
= 0 V
di/dt = 100 A/
µs
10
0.1
1
10
100
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V
SD
- Source to Drain Voltage - V
I
F
- Drain Current - A
Data Sheet D15617EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
V
DD
= 60 V
38 V
15 V
10
8
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