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2SK3511-S

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size78KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3511-S Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3511
2SK3511-S
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
Super low on-state resistance:
R
DS(on)
= 12.5 mΩ MAX. (V
GS
= 10 V, I
D
= 42 A)
Low C
iss
: C
iss
= 5900 pF TYP.
Built-in gate protection diode
2SK3511-ZJ
2SK3511-Z
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
75
±20
±83
±260
100
1.5
150
–55 to +150
52
250
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 35 V, R
G
= 25
Ω,
V
GS
= 20
0 V
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A
)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15617EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
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