EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK3556-01L

Description
N-CHANNEL SILICON POWER MOSFET
File Size128KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
Download Datasheet View All

2SK3556-01L Overview

N-CHANNEL SILICON POWER MOSFET

2SK3556-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
250
220
±25
±100
±30
25
372
20
5
2.02
135
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
<
<
<
*1 L=0.67mH, Vcc=48V *2 Tch=150°C *3 I
F
<
D
, -di/dt=50A/µs, Vcc=BV
DSS
, Tch=150°C
=-I
*4 V
DS
<250V *5 V
GS
=-30V *6 t=60sec f=60Hz
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
=250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=12.5A V
GS
=10V
I
D
=12.5A
V
DS
=75V
V
GS
=0V
f=1MHz
V
DS
=25V
T
ch
=25°C
T
ch
=125°C
10
75
16
2000
220
15
20
30
60
20
44
14
16
25
1.10
0.45
1.5
1.65
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
100
3000
330
30
30
45
90
30
66
21
24
Units
V
V
µA
nA
mΩ
S
pF
8
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
V
CC
=72V
I
D
=12A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=25A V
GS
=0V T
ch
=25°C
I
F
=25A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
62.0
Units
°C/W
°C/W
1
【ESP32-C3-DevKitM-1】ESP32-C3 gets network time
[i=s]This post was last edited by 怀怀少年梦 on 2021-7-6 10:55[/i]ESP32-C3 can obtain network time through SNTP. I briefly learned about SNTP, which is translated as Simple Network Time Protocol, which is ...
怀揣少年梦 Domestic Chip Exchange
How to debug ce5.0 driver in vs2005
I want to debug the ce5.0 driver in VS2005, how can I do it? I have written the driver for the platform X86 with vs2005, one ISR and one IST, compiled it successfully, added the generated dll to the i...
kaixiongwu Embedded System
Fidelity test to verify the purity of AD converters
[b]Introduction[/b] [p=22, null, left][color=rgb(0, 0, 0)][font=Arial, Helvetica, sans-serif, 瀹嬩綋]The ability to accurately digitize a sine wave is a sensitive test of the fidelity of a high-resolutio...
wstt Microcontroller MCU
A brief introduction to communication principles
The main content of "Communication Principles in Simple Terms" is derived from the author's "Communication Principles in Simple Terms" series on the Communication People's Home. The compilation inheri...
arui1999 Download Centre
Please advise on the batch transmission problem in USB HOST development
I recently used LPC2378+ISP1161 to make a USB host project. I found a few problems and would like to discuss them with you: Bulk transfer problem. A read or write operation has three stages: command, ...
liyq007 Embedded System
About the transplantation of x264 on the arm9 platform
Cross-compiler: arm-linux-gcc 4.0.0 x264 version: x264-snapshot-20090408-2245 Development board: Samsung 2440 Encoding parameters: ./x264 -q 26 -o "hall.264" "hall_qcif.yuv" 176x144 It's very strange....
mhw1216 ARM Technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1287  318  26  971  907  26  7  1  20  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号