DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3571
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3571 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
5
ORDERING INFORMATION
PART NUMBER
2SK3571
2SK3571-S
2SK3571-ZK
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•4.5V
drive available.
•Low
on-state resistance,
R
DS(on)1
= 9.0 mΩ MAX. (V
GS
= 10 V, I
D
= 24 A)
•Low
gate charge
Q
G
= 21 nC TYP. (V
DD
= 16 V, V
GS
= 10 V, I
D
= 48 A)
•Built-in
gate protection diode
•Surface
mount device available
2SK3571-Z
Note
TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±48
±192
1.5
40
150
−55
to +150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16257EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
The mark
!
shows major revised points.
©
2002
2SK3571
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Symbol
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 16 V
V
GS
= 10 V
I
D
= 48 A
I
F
= 48 A, V
GS
= 0 V
I
F
= 48 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
Test Conditions
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 24 A
V
GS
= 10 V, I
D
= 24 A
V
GS
= 4.5 V, I
D
= 18 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V, I
D
= 24 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
11
7.0
10
1100
450
160
13
5
40
9
21
4.2
5
1.0
41
27
9.0
16
MIN.
TYP.
MAX.
10
±10
2.5
Unit
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
V
GS
0
10%
V
GS
90%
I
G
= 2 mA
50
Ω
R
L
V
DD
V
DD
PG.
90%
V
DS
90%
10%
10%
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D16257EJ2V0DS
2SK3571
5
TYPICAL CHARACTERISTICS (T
A
= 25°C)
°
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
100
P
T
- Total Power Dissipation - W
0
25
50
75
100
125
150
175
40
80
30
60
20
40
20
10
0
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
T
C
- Case Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
limited
PW = 10
µs
100
100
µs
10
I
D(DC)
DC
1 ms
Power dissipation
limited
10 m s
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 83.3°C/W
10
R
th(ch-C)
= 3.13°C/W
1
0.1
Single pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16257EJ2V0DS
3
2SK3571
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
FORWARD TRANSFER CHARACTERISTICS
1000
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
150
V
GS
= 10 V
I
D
- Drain Current - A
100
10
T
ch
= 150°C
75°C
25°C
−55°C
100
4.5 V
1
50
0.1
Pulsed
0
0
0.5
1
1.5
2
2.5
3
0.01
0
1
2
3
4
5
6
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2
1.5
1
0.5
0
-50
0
50
V
DS
= 10 V
I
D
= 1 mA
10
T
ch
= 150°C
75°C
25°C
−55°C
1
V
DS
= 10 V
Pulsed
0.1
0.1
1
10
100
100
150
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
Pulsed
20
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
Pulsed
20
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
15
V
GS
= 4.5 V
10
10 V
5
15
10
I
D
= 24 A
5
0
0
5
10
15
20
0
1
10
100
1000
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
4
Data Sheet D16257EJ2V0DS
2SK3571
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
15
V
GS
= 4.5 V
10
C
iss
, C
oss
, C
rss
- Capacitance - pF
1000
C
iss
C
oss
C
rss
10 V
100
5
I
D
= 24 A
Pulsed
0
-50
0
50
100
150
V
GS
= 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
10 00
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
10
V
DD
= 16 V
10 V
V
DS
- Drain to Source Voltage - V
16
8
10 0
t
d (o ff)
t
f
10
t
r
t
d (o n )
12
V
GS
8
6
4
4
V
DS
I
D
= 48 A
2
1
0.1
1
10
10 0
0
0
5
10
15
20
25
0
I
D
- Drain Current - A
Q
G
- Gate Change - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
V
GS
= 10 V
0V
1
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
t
rr
- Reverse Recovery Time- ns
I
F
- Diode Forward Current - A
100
10
10
0.1
di/dt = 100 A/µs
V
GS
= 0 V
0.01
0
0.4
0.8
1.2
1.6
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
D
- Drain Current - A
Data Sheet D16257EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
D D
= 10 V
V
G S
= 10 V
R
G
= 10
Ω
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