DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3574
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3574 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
5
ORDERING INFORMATION
PART NUMBER
2SK3574
2SK3574-S
2SK3574-ZK
2SK3574-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•4.5V
drive available
•Low
on-state resistance
R
DS(on)1
= 13.5 mΩ MAX. (V
GS
= 10 V, I
D
= 24 A)
•Low
gate charge
Q
G
= 22 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 48 A)
•Built-in
gate protection diode
•Avalanche
capability ratings
•Surface
mount device available
Note
TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±48
±140
1.5
29
150
–55 to +150
19
36
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16260EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
©
2002
2SK3574
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
°
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 24 V
V
GS
= 10 V
I
D
= 48 A
I
F
= 48 A, V
GS
= 0 V
I
F
= 48 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 24 A
V
GS
= 10 V, I
D
= 24 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 24 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
7.0
10.1
15
940
245
170
12
18
39
12
22
3.8
7
1.1
29
24.8
13.5
24
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16260EJ2V0DS
2SK3574
TYPICAL CHARACTERISTICS (T
A
= 25°C)
°
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
40
P
T
- Total Power Dissipation - W
100
30
80
60
20
40
10
20
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100 125 150 175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
T
C
= 25°C Single pulse
I
D(pulse)
I
D
- Drain Current - A
100
R
DS(o n)
Lim ited
PW = 10
µs
10
I
D(DC)
DC
100
µs
1 ms
10 m s
1
Power Disspasion
Lim ited
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 83.3°C/W
10
R
th(ch-C)
= 4.31°C/W
1
0.1
Single pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16260EJ2V0DS
3
2SK3574
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
150
100
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
I
D
- Drain Current - A
V
GS
= 10 V
10
100
1
T
ch
= 150°C
75°C
25°C
−55°C
50
4.5 V
0.1
V
DS
= 10 V
Pulsed
Pulsed
0
0
1
2
3
0.01
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
3
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 10 V
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
10
T
ch
= 150°C
75°C
25°C
−55°C
1
0.1
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
30
Pulsed
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
25
20
V
GS
= 4.5 V
25
20
15
I
D
= 24 A
15
10
10 V
10
5
0
0
5
10
15
20
5
0
1
10
100
1000
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16260EJ2V0DS
2SK3574
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10 00 0
20
V
GS
=4.5 V
C
iss
, C
oss
, C
rss
- Capacitance - pF
I
D
= 24 A
Pulsed
V
GS
= 0 V
f = 1 MHz
C
iss
10 00
C
oss
15
10
10 V
5
10 0
C
rs s
0
-50
0
50
100
150
10
0.01
0.1
1
10
10 0
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
12
V
DS
- Drain to Source Voltage - V
25
100
t
d(off)
t
r
t
d(on)
10
t
f
20
V
DD
= 24 V
15 V
6V
10
8
15
V
GS
10
V
DS
I
D
= 48 A
6
4
5
2
1
0.1
1
10
100
0
0
5
10
15
20
25
0
I
D
- Drain Current - A
Q
G
- Gate Change - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
V
G S
= 10 V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
V
GS
= 0 V
t
rr
- Reverse Recovery Time- ns
I
F
- Diode Forward Current - A
100
10
0V
1
10
0.1
Pulsed
0.01
0
0.5
1
1.5
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
D
- Drain Current - A
Data Sheet D16260EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
D D
= 15 V
V
G S
= 10 V
R
G
= 10
Ω
Embedded System
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