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2SK3577

Description
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
File Size65KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3577 Overview

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3577
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3577 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
3
1.5
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 63 mΩ MAX. (V
GS
= 4.5 V, I
D
= 2.0 A)
R
DS(on)2
= 65 mΩ MAX. (V
GS
= 4.0 V, I
D
= 2.0 A)
R
DS(on)3
= 91 mΩ MAX. (V
GS
= 2.5 V, I
D
= 2.0 A)
0 to 0.1
1
2
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
2SK3577
PACKAGE
SC-96 (Mini Mold Thin Type)
1 : Gate
2 : Source
3 : Drain
Marking: XL
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
V
DSS
V
GSS
I
D(DC)
30
±12
±3.5
±14
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Body
Diode
Drain
I
D(pulse)
P
T1
Note2
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on FR-4 board, t
5 sec.
P
T2
T
ch
T
stg
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15938EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
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