P6SMB11CAT3 Series
600 Watt Peak Power Zener
Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Features
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•
•
•
•
•
•
•
•
•
Working Peak Reverse Voltage Range
−
9.4 to 77.8 V
Standard Zener Breakdown Voltage Range
−
11 to 91 V
Peak Power
−
600 W @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
9.4−78 VOLTS
600 WATT PEAK POWER
SMB
CASE 403A
PLASTIC
Mechanical Characteristics:
CASE:
Void-Free, Transfer-Molded, Thermosetting Plastic
FINISH:
All External Surfaces are Corrosion Resistant and Leads are
MARKING DIAGRAM
AYWW
xxC
G
G
Readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS:
Modified L−Bend Providing More Contact Area to Bond Pads
POLARITY:
Polarity Band Will Not be Indicated
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25°C,
Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance, Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance, Junction−to−Ambient
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
T
J
, T
stg
Value
600
3.0
40
25
0.55
4.4
226
−65
to
+150
Unit
W
W
mW/°C
°C/W
W
mW/°C
°C/W
°C
xxC = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
= Pb−Free Package
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
P6SMBxxCAT3
P6SMBxxCAT3G
Package
SMB
SMB
(Pb−Free)
Shipping
†
2500/Tape & Reel
2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 10 X 1000
ms,
non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.
©
Semiconductor Components Industries, LLC, 2009
The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended
choices for future use and best overall value.
October, 2009
−
Rev. 10
1
Publication Order Number:
P6SMB11CAT3/D
P6SMB11CAT3 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
I
PP
I
T
V
C
V
BR
V
RWM
I
R
I
R
V
RWM
V
BR
V
C
I
T
I
PP
I
V
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
V
RWM
(Note 4)
Volts
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
I
R
@
V
RWM
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Breakdown Voltage
V
BR
Volts
(Note 5)
Min
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
Nom
11.05
12
13.05
15.05
16
18
20
22
24
27.05
30
33.05
36
39.05
43.05
47.05
51.05
56
62
68
75.05
82
91
Max
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
@ I
T
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 6)
V
C
Volts
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
I
PP
Amps
38
36
33
28
27
24
22
20
18
16
14.4
13.2
12
11.2
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
QV
BR
%/°C
0.075
0.078
0.081
0.084
0.086
0.088
0.09
0.09
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
C
typ
(Note 7)
pF
865
800
740
645
610
545
490
450
415
370
335
305
280
260
240
220
205
185
170
155
140
130
120
Device*
P6SMB11CAT3, G
P6SMB12CAT3, G
P6SMB13CAT3, G
P6SMB15CAT3, G
P6SMB16CAT3, G
P6SMB18CAT3, G
P6SMB20CAT3, G
P6SMB22CAT3, G
P6SMB24CAT3, G
P6SMB27CAT3, G
P6SMB30CAT3, G
P6SMB33CAT3, G
P6SMB36CAT3, G
P6SMB39CAT3, G
P6SMB43CAT3, G
P6SMB47CAT3, G
P6SMB51CAT3, G
P6SMB56CAT3, G
P6SMB62CAT3, G
P6SMB68CAT3, G
P6SMB75CAT3, G
P6SMB82CAT3, G
P6SMB91CAT3, G
Device
Marking
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data
−
600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25°C
*The “G’’ suffix indicates Pb−Free package available. Please refer back to Ordering Information on front page.
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2
P6SMB11CAT3 Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
10
t
r
≤
10
ms
100
VALUE (%)
PEAK VALUE - I
PP
I
HALF VALUE -
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
I
PP
.
PP, PEAK POWER (kW)
1
50
t
P
0.1
0.1
ms
1
ms
10
ms
100
ms
t
P
, PULSE WIDTH
1 ms
10 ms
0
0
1
2
t, TIME (ms)
3
4
5
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25
°
C
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
1000
P6SMB11CAT3G
P6SMB18CAT3G
C, CAPACITANCE (pF)
100
P6SMB47CAT3G
P6SMB91CAT3G
10
T
J
= 25°C
f = 1 MHz
1
1
10
BIAS VOLTAGE (VOLTS)
100
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs. Bias
Voltage
TYPICAL PROTECTION CIRCUIT
Z
in
V
in
LOAD
V
L
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P6SMB11CAT3 Series
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition
associated with the inductance of the device and the inductance
of the connection method. The capacitive effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating
voltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces an
overshoot in the voltage across the equipment or component
being protected as shown in Figure 5. Minimizing this
overshoot is very important in the application, since the main
purpose for adding a transient suppressor is to clamp voltage
spikes. The SMB series have a very good response time,
typically < 1 ns and negligible inductance. However, external
inductive effects could produce unacceptable overshoot.
Proper circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 6. Average power must be derated as the lead or ambient
temperature rises above 25°C. The average power derating
curve normally given on data sheets may be normalized and
used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms
pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
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P6SMB11CAT3 Series
V
V
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
in
(TRANSIENT)
V
L
V
in
(TRANSIENT)
V
L
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 5.
Figure 6.
1
0.7
0.5
DERATING FACTOR
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10
ms
0.1 0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50 100
PULSE WIDTH
10 ms
1 ms
100
ms
Figure 7. Typical Derating Factor for Duty Cycle
UL RECOGNITION
The entire series has
Underwriters Laboratory
Recognition
for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
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51mcu
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