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2SK3588-01S

Description
N-CHANNEL SILICON POWER MOSFET
File Size109KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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2SK3588-01S Overview

N-CHANNEL SILICON POWER MOSFET

2SK3588-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
100
70
±50
±200
±30
50
465
20
5
1.67
135
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
Gate(G)
Equivalent circuit schematic
Drain(D)
°C
°C
Source(S)
*1 L=223µH, Vcc=48V
*2 Tch< 150°C *3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
=
< 100V *5 V
GS
=-30V
*4 V
DS
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
T
ch
=25°C
V
DS
=100V V
GS
=0V
T
ch
=125°C
V
DS
=80V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=25A
V
GS
=10V
R
GS
=10
V
CC
=50V
I
D
=50A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
100
3.0
Typ.
Max.
5.0
25
250
100
25
2745
690
57
30
53
75
35
78
24
27
1.65
Units
V
V
µA
nA
mΩ
S
pF
15
10
19
30
1830
460
38
20
35
50
23
52
16
18
1.10
0.1
0.4
ns
nC
50
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
75.0
Units
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
1

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