DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3634
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3634 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
2SK3634
2SK3634-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
High voltage: V
DSS
= 200 V
•
Gate voltage rating: ±30 V
R
DS(on)
= 0.60
Ω
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
•
Low C
iss
: C
iss
= 270 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Built-in gate protection diode
•
TO-251/TO-252 package
•
Avalanche capability rated
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Pulse Avalanche Energy
Note3
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD =
100 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
3.
T
ch
≤
125°C , R
G
= 25
Ω
, V
DD
= 100 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
I
AR
E
AR
200
±30
±6.0
±18
20
1.0
150
–55 to +150
6.0
3.6
6.0
2.0
V
V
A
A
W
W
°C
°C
A
mJ
A
mJ
(TO-252)
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15936EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
2SK3634
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 160 V
V
GS
= 10 V
I
D
= 6.0 A
I
F
= 16 A, V
GS
= 0 V
I
F
= 6 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 200 V, V
GS
= 0 V
V
GS
= ±30 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 3.0 A
V
GS
= 10 V, I
D
= 3.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 100 V, I
D
= 3.0 A
V
GS
= 10 V
R
G
= 0
Ω
2.5
2
3.5
4
0.47
270
75
33
4
8
14
6
9
1.5
4.5
1.0
100
320
0.60
MIN.
TYP.
MAX.
10
±10
4.5
UNIT
µ
A
µ
A
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90%
90%
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10%
10%
τ
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D15936EJ2V0DS
2SK3634
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING
FACTOR
OF
FORWARD
BIAS
25
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
SAFE OPERATING AREA
100
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
20
80
15
60
40
10
20
5
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(D C)
= 6 A
10
P W = 100
µs
1 ms
10 m s
T
C
- Case Temperature -
°C
I
D
- Drain Current - A
R
D S (on)
Lim ited
(V
G S
= 10 V )
1
0.1
P ower D issipation
Lim ited
0.01
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th( j-A)
= 125°C/W
100
10
R
th( j-C)
= 6.25°C/W
1
0.1
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15936EJ2V0DS
3
2SK3634
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
Pulsed
V
GS
= 10 V
25
FORWARD TRANSFER CHARACTERISTICS
100
P ulse d
V
D S
= 10 V
10
I
D
- Drain Current - A
20
I
D
- Drain Current - A
1
T
ch
= 1 25
°C
75
°C
25
°C
−25 °C
15
0 .1
10
0 .0 1
5
0.0 0 1
0
0
5
10
15
20
25
30
0 .00 0 1
0
5
10
15
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
5
100
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
Pulsed
V
DS
= 10 V
V
GS(off)
- Gate Cut-off Voltage - V
4.5
V
SD
= 10 V
I
D
= 1 mA
10
4
T
A
=
−25°C
25°C
75°C
125°C
3.5
1
3
0.1
2.5
2
-50
-25
0
25
50
75
100
125
150
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance -
Ω
Pulsed
V
G S
= 10 V
1.5
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
12
14
16
18
20
I
D
= 6.0 A
3.0 A
1.5 A
Pulsed
2
1
0.5
0
0.01
0.1
1
10
100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D15936EJ2V0DS
2SK3634
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125
150
I
D
= 6 A
3A
Pulsed
V
GS
= 10 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1000
C
iss
V
GS
= 0 V
f = 1 MHz
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
C
oss
10
C
rss
1
0.1
1
10
100
1000
T
ch
- Channel Temperature -
°C
SWITCHING CHARACTERISTICS
100
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
240
12
I
D
= 6.0 A
220
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
180
160
140
120
100
80
60
40
20
0
t
d(off)
10
V
DD
= 160 V
100 V
40 V
V
GS
8
t
r
t
f
t
d(on)
6
4
V
DS
2
1
0.1
1
10
100
0
0
1
2
3
4
5
6
7
8
9
10
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
V
GS
= 0 V
10
1000
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
V
GS
= 0 V
di/dt = 100 A /µs
t
rr
- Reverse Recovery Time - ns
I
F
– Diode Forward Current - A
100
1
10
0.1
0.01
0
0.5
1
1.5
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
– Diode Forward Current - A
Data Sheet D15936EJ2V0DS
5
V
GS
- Gate to Drain Voltage - V
V
D D
= 100 V
V
G S
= 10 V
R
G
= 0
Ω
200
10
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