DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3638
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3638 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3638-ZK
PACKAGE
TO-252 (MP-3ZK)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 8.5 mΩ MAX. (V
GS
= 10 V, I
D
= 32 A)
R
DS(on)2
= 15 mΩ MAX. (V
GS
= 4.5 V, I
D
= 18 A)
•
Low C
iss
: C
iss
= 1100 pF TYP.
•
Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±64
±220
36
1.0
150
–55 to +150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15966EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
2SK3638
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 20 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 32 A
V
GS
= 10 V, I
D
= 32 A
V
GS
= 4.5 V, I
D
= 18 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 10 V, I
D
= 32 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
12
25
6.8
10
1100
450
170
10
4.3
35
9.7
2.5
Drain to Source On-state Resistance
8.5
15
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 16 V
V
GS
= 10 V
I
D
= 64 A
I
F
= 64 A, V
GS
= 0 V
I
F
= 64 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
22
4.3
5.1
1.0
31
23
Note
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
D.U.T.
V
GS
0
10%
I
G
= 2 mA
V
GS
90%
R
L
V
DD
V
DD
PG.
90%
90%
10%
10%
50
Ω
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D15966EJ3V0DS
2SK3638
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
P
T
- Total Power Dissipation - W
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D (pulse)
PW = 10
µs
I
D
- Drain Current - A
100
I
D (D C )
100
µs
R
D S (on)
Lim ited
(at V
G S
= 10 V )
10
DC
1 ms
10 m s
1
P ower D issipation Lim ited
T
C
= 25°C
Single pulse
0.1
1
10
0.1
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/W
100
10
R
th(ch-C)
= 3.47°C/W
1
0.1
Single pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15966EJ3V0DS
3
2SK3638
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
100
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
V
GS
= 10 V
I
D
- Drain Current - A
200
10
150
T
ch
=
−55°C
25°C
75°C
150°C
1
100
4.5 V
50
Pulsed
0
0.5
1
1.5
2
2.5
3
0.1
V
DS
= 10 V
Pulsed
0.01
0
1
2
3
4
5
0
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
T
ch
=
−55°C
25°C
75°C
150°C
10
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2
1.5
1
0.5
0
-50
0
50
V
DS
= 10 V
I
D
= 1 m A
1
0.1
0.1
1
10
V
DS
= 10 V
Pulsed
100
100
150
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
25
20
15
10
5
0
1
10
100
1000
V
GS
= 4.5 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
25
20
15
10
I
D
= 32 A
5
0
0
5
10
15
20
Pulsed
10 V
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D15966EJ3V0DS
2SK3638
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10 00 0
20
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
1 00 0
C
is s
C
oss
15
V
GS
= 4.5 V
10 V
10
10 0
C
rs s
5
I
D
= 32 A
Pulsed
-50
0
50
100
150
0
10
0 .01
0 .1
1
10
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
10
V
D D
= 16 V
10 V
V
DS
- Drain to Source Voltage - V
16
8
100
t
d(off)
12
V
GS
8
6
t
d(on)
10
t
f
t
r
1
0.1
1
10
100
4
4
V
DS
0
0
5
10
15
20
25
I
D
= 64 A
2
0
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
V
G S
= 10 V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/
µ
s
V
GS
= 0 V
100
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
100
10
0V
1
10
0.1
Pulsed
0.01
0
0.5
1
1.5
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D15966EJ3V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
D D
= 10 V
V
G S
= 10 V
R
G
= 10
Ω
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