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2SK3640-ZK

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size155KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3640-ZK Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3640
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3640 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3640-ZK
PACKAGE
TO-252 (MP-3ZK)
FEATURES
Low on-state resistance
R
DS(on)1
= 21 mΩ MAX. (V
GS
= 10 V, I
D
= 9 A)
R
DS(on)2
= 40 mΩ MAX. (V
GS
= 4.5 V, I
D
= 9 A)
Low C
iss
: C
iss
= 570 pF TYP.
Built-in gate protection diode
(TO-252)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
30
±16
±19
±76
20
1.0
150
–55 to +150
10
10
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
= 20
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15968EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002

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