DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3668
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3668 is N-channel DMOS FET device that
features a low on-state resistance, low charge and
excellent switching characteristics, designed for high
voltage applications such as high intensity discharge
lamp drive.
ORDERING INFORMATION
PART NUMBER
2SK3668-ZK
PACKAGE
TO-263 (MP-25ZK)
(TO-263)
FEATURES
•
Low gate charge
Q
G
= 26 nC TYP. (V
DD
= 320 V, V
GS
= 10 V, I
D
= 10 A)
•
Gate voltage rating: ±30 V
•
Low on-state resistance
R
DS(on)
= 0.55
Ω
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
•
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
400
±30
±10
±34
1.5
100
150
–55 to +150
10
8
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
5
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
5
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistane
R
th(ch-C)
R
th(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16547EJ2V0DS00 (2nd edition)
Date Published April 2003 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
2002
2SK3668
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
Note
TEST CONDITIONS
V
DS
= 400 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 150 V, I
D
= 5.0 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
100
±100
UNIT
µ
A
nA
V
S
2.5
3.0
5.6
0.40
1320
230
13
18
8
44
4
3.5
5
Forward Transfer Admittance
Note
Note
5
Drain to Source On-state Resistance
0.55
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
DD
= 320 V
V
GS
= 10 V
I
D
= 10 A
I
F
= 10 A, V
GS
= 0 V
I
F
= 10 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
26
7
11
0.90
350
2.7
V
F(S-D)
t
rr
Q
rr
µ
C
Note
Pulsed: PW
≤
800
µ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D16547EJ2V0DS
2SK3668
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
100
100
80
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
5
FORWARD BIAS SAFE OPERATING AREA
100
PW = 1 ms
I
D
- Drain Current - A
I
D(DC)
= 10 A
10
R
DS(on)
Limited
(at V
GS
= 10 V)
DC
1
10 ms
100 ms
Power Dissipation Limited
0.1
T
C
= 25°C
Single pulse
0.01
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
5
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
R
th(t)
- Transient Thermal Resistance -
°C/W
10
R
th(ch-A)
= 83.3°C/W
1
R
th(ch-C)
= 1.25°C/W
0.1
0.01
Single pulse
R
th(ch-A)
: T
A
= 25°C
R
th(ch-C)
: T
C
= 25°C
0.001
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet D16547EJ2V0DS
3
2SK3668
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
40
35
V
GS
= 20 V
FORWARD TRANSFER CHARACTERISTICS
100
V
DS
= 10 V
Pulsed
10
I
D
- Drain Current - A
30
10 V
25
20
15
10
5
Pulsed
0
0
5
10
15
20
25
30
I
D
- Drain Current - A
1
T
A
= 150°C
125°C
75°C
25°C
−25°C
0.1
0.01
0.001
0.0001
0
5
10
15
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
T
A
= 150°C
125°C
75°C
25°C
−25°C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
3.5
10
3.0
1
2.5
0.1
2.0
1.5
- 25
0
25
50
75
100
125
150
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
2
V
GS
= 10 V
Pulsed
1.5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
0.9
0.8
I
D
= 10 A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
12
14
16
18
20
5.0 A
2.0 A
Pulsed
1
0.5
0
0.01
0.1
1
10
100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16547EJ2V0DS
2SK3668
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.4
1.2
1
I
D
= 10 A
0.8
0.6
0.4
0.2
0
- 25
5.0 A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 10 V
Pulsed
C
iss
1000
100
C
oss
10
V
GS
= 0
f = 1.0 MHz
C
rss
0
25
50
75
100
125
150
1
0.01
0.1
1
10
100
1000
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400
16
I
D
= 10 A
350
300
250
200
150
100
50
0
V
DS
V
GS
V
DD
= 320 V
200 V
100 V
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
t
d(o ff)
t
f
t
d(o n)
10
t
r
1
0
0.1
1
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
t
rr
- Reverse Recovery Time - ns
Pulsed
I
F
- Diode Forward Current - A
10
100
V
GS
= 10 V
1
0V
10
0.1
di/dt = 100 A/µs
V
GS
= 0 V
1
0.1
1
10
100
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D16547EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
V
D D
= 150 V
V
G S
= 10 V
R
G
= 10
Ω
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