DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3712
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3712 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
2SK3712
2SK3712-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
High voltage: V
DSS
= 250 V
•
Gate voltage rating: ±30 V
•
Low on-state resistance
R
DS(on)
= 0.58
Ω
MAX. (V
GS
= 10 V, I
D
= 4.5 A)
•
Low C
iss
: C
iss
= 450 pF TYP. (V
DS
= 10 V, I
D
= 0 A)
•
Built-in gate protection diode
•
TO-251/TO-252 package
(TO-251)
250
±30
±9.0
±27
40
1.0
150
–55 to +150
9
8.1
9
8.1
V
V
A
A
W
W
°C
°C
A
mJ
A
mJ
(TO-252)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Pulse Avalanche Energy
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
I
AR
E
AR
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 125 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V, L = 100
µ
H
3.
T
ch(peak)
≤
150°C, L = 100
µ
H
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16372EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
2SK3712
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 250 V, V
GS
= 0 V
V
GS
= ±30 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 4.5 A
V
GS
= 10 V, I
D
= 4.5 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 125 V, I
D
= 4.5 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
2.5
3
3.5
6
0.45
450
100
40
8
8
21
6
4.5
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
0.58
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 200 V
V
GS
= 10 V
I
D
= 9.0 A
I
F
= 9 A, V
GS
= 0 V
I
F
= 9 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
14
3
7
0.9
150
630
1.5
V
F(S-D)
t
rr
Q
rr
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16372EJ2V0DS
2SK3712
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
100
P
T
- Total Power Dissipation - W
40
80
30
60
20
40
20
10
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
T
C
= 25°C
Single pulse
I
D(pulse)
= 27 A
PW = 100
µs
1 ms
10 ms
I
D
- Drain Current - A
10
I
D(DC)
= 9.0 A
1
R
DS(on)
Limited
(at V
GS
= 10 V)
0.1
Power dissipation limited
0.01
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
Single pulse
R
th(ch-A)
: T
A
= 25°C
R
th(ch-C)
: T
C
= 25°C
R
th(ch-A)
= 125°C/W
10
R
th(ch-C)
= 3.125°C/W
1
0.1
0.01
100
µ
1m
10 m
100m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16372EJ2V0DS
3
2SK3712
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
V
GS
= 10 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
100
V
DS
= 10 V
Pulsed
T
A
=
−25°C
25°C
75°C
125°C
150°C
25
10
I
D
- Drain Current - A
I
D
- Drain Current - A
20
1
15
0.1
10
0.01
5
0.001
0
0
5
10
15
20
25
30
0.0001
0
5
10
15
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
T
A
=
−
25°C
25°C
75°C
125°C
150°C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
4
10
3.5
1
3
0
V
DS
= 10 V
Pulsed
2.5
2
-50
-25
0
25
50
75
100
125
150
175
0
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance -
Ω
R
DS(on)
- Drain to Source On-state Resistance -
Ω
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
1
10
100
V
GS
= 10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
2
4
6
8
10
12
14
16
18
20
I
D
= 9.0 A
4.5 A
1.8 A
Pulsed
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16372EJ2V0DS
2SK3712
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance -
Ω
2
1.75
1.5
1.25
1
4.5 A
0.75
0.5
0.25
0
-50
-25
0
25
50
75
100
125
150
175
I
D
= 9.0 A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 10 V
Pulsed
C
iss
100
C
oss
10
C
rss
V
GS
= 0 V
f = 1 MHz
1
0.1
1
10
100
1000
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
250
15
V
DS
- Drain to Source Voltage - V
t
f
t
d(off)
200
V
DD
= 200 V
125 V
62.5 V
V
GS
12
150
9
10
t
d(on)
t
r
100
6
1
0.1
V
DD
= 125 V
V
GS
= 10 V
R
G
= 0
Ω
1
10
100
50
V
DS
3
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
µ
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
V
GS
= 0 V
Pulsed
10
100
1
10
0.1
0.01
0
0.25
0.5
0.75
1
1.25
1.5
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D16372EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
I
D
= 9.0 A
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