DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3714
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3714 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3714
PACKAGE
Isolated TO-220
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 13 mΩ MAX. (V
GS
= 10 V, I
D
= 25 A)
R
DS(on)2
= 22 mΩ MAX. (V
GS
= 4.0 V, I
D
= 25 A)
•
Low C
iss
: C
iss
= 3200 pF TYP.
•
Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±50
±160
35
2.0
150
−55
to +150
31
96
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16537EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003
2SK3714
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 25 A
V
GS
= 10 V, I
D
= 25 A
V
GS
= 4.0 V, I
D
= 25 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 25 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
17
2.0
34
11
16
3200
520
260
15
10
58
7
2.5
Drain to Source On-state Resistance
13
22
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 50 A
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
60
10
16
0.94
46
80
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16537EJ2V0DS
2SK3714
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
40
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D
- Drain Current - A
I
D(pulse)
PW = 100
µ
s
100
1 ms
10
1
I
D(DC)
DC
10 ms
0.1
0.01
0.1
1
10
100
Single pulse
T
C
= 25°C
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 62.5°C/W
10
1
R
th(ch-C)
= 3.57°C/W
0.1
Single pulse
0.01
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16537EJ2V0DS
3
2SK3714
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
I
D
- Drain Current - A
I
D
- Drain Current - A
80
100
T
A
= –40˚C
25˚C
75˚C
150˚C
60
V
GS
=10 V
40
4.0 V
20
0
0
0.2
0.4
0.6
Pulsed
0.8
10
1
0.1
1
2
3
4
V
DS
= 10 V
5
6
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100 V
DS
= 10 V
Pulsed
10
3.0
2.5
2.0
1.5
1.0
0.5
0
−50
1
T
A
= 150˚C
75˚C
25˚C
–40˚C
0.1
0
50
100
150
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
30
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
V
GS
= 4.0 V
20
I
D
= 40 A
10
10
10 V
0
1
10
100
1000
0
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16537EJ2V0DS
2SK3714
R
DS(on)
- Drain to Source On-state Resistance - mΩ
C
iss
, C
oss
, C
rss
- Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
V
GS
= 0 V
f = 1 MHz
C
iss
1000
C
oss
100
30
V
GS
= 4.0 V
10 V
20
10
C
rss
0
I
D
= 40 A
−50
0
50
100
150
10
0.1
1
10
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
V
DD
= 48 V
30 V
12 V
9
8
7
6
5
V
GS
4
3
2
V
DS
1
0
0
10
20
30
40
50
60
70
80
V
DS
- Drain to Source Voltage - V
45
40
35
30
25
20
15
10
5
0
100
t
d(off)
t
d(on)
10
t
r
t
f
1
0.1
1
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
µ
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
100
V
GS
= 10 V
100
10
V
GS
= 0 V
10
1
0.1
0
0.5
1.0
1.5
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D16537EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
V
DD
= 30 V
V
GS
= 10 V
R
G
= 0
Ω
I
D
= 50 A
Pulsed
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