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2SK3717

Description
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
File Size34KB,4 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3717 Overview

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3717
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3717 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
4.0
±0.2
2.0
±0.2
FEATURES
Compact package
High forward transfer admittance
1400
µ
S TYP. (I
DSS
= 250
µ
A)
Includes diode and high resistance at G-S
1
2 3
0.50 TYP.
1.0
TYP.
0.45 TYP.
0.42 TYP.
0.6 TYP.
ORDERING INFORMATION
PART NUMBER
2SK3717
PACKAGE
SC-72 (SST)
1.27 TYP.
1.27 TYP.
1.35
TYP.
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
−1.0
V)
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
−20
10
10
100
125
−55
to +125
V
V
mA
mA
mW
°C
°C
1: Source
2: Gate
3: Drain
1
2
3
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16785EJ1V0DS00 (1st edition)
Date Published July 2003 NS CP(K)
Printed in Japan
12.5 MIN.
3.0
±0.2
2003
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