DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3719
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3719 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
0.2
0.13
–0.05
+0.1
FEATURES
1.2 ±0.1
−0.5
dB (V
DS
= 2.0 V, C = 5 pF, R
L
= 2.2 kΩ)
•
Low noise
−109
dB (V
DS
= 2.0 V, C = 5 pF, R
L
= 2.2 kΩ)
•
Super thin thickness package
t = 0.37 mm TYP.
0.8 ±0.1
•
High gain
3
0
to
0.05
0.45
0.45
MAX. 0.4
1.4 ±0.1
ORDERING INFORMATION
PART NUMBER
2SK3719
PACKAGE
3pXSOF (0814)
0.2
+0.1
–0
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
−1.0
V)
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
−20
10
10
100
125
−55
to +125
V
V
mA
mA
mW
°C
°C
EQUIVALENT CIRCUIT
2
3
1
1: Source
2: Drain
3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16787EJ2V0DS00 (2nd edition)
Date Published April 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
(0.26)
2
1
2003
2SK3719
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF POWER DISSIPATION
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
800
0.1 V
600
400
200
0
0
2
4
6
8
10
0V
−0.1
V
−0.2
V
−0.3
V
V
GS
= 0.2 V
dT - Derating Factor - %
T
A
- Ambient Temperature -
°C
I
D
- Drain Current -
µ
A
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
1600
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2.0 V
I
GS
- Gate to Source Current -
µ
A
40
30
1400
I
D
- Drain Current -
µ
A
20
10
−0.8 −0.6 −0.4 −0.2
0 0.2
−10
−20
−30
−40
0.4
0.6
0.8
1200
1000
800
600
400
200
0
-0.8 -0.6 -0.4 -0.2
V
GS
- Gate to Source Voltage - V
0
0.2 0.4 0.6 0.8
1
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
10
| y
fs
| - Forward Transfer Admittance - mS
V
GS(off)
- Gate Cut-off Voltage - V
V
GS
= 0 V
f = 1.0 MHz
V
DS
= 2.0 V
C
iss
- Input Capacitance - pF
| y
fs
|
1
V
GS(off)
1
1
10
100
0.1
10
100
1000
V
DS
- Drain to Source Voltage - V
I
DSS
- Zero Gate Voltage Drain Current -
µ
A
Data Sheet D16787EJ2V0DS
3
2SK3719
•
The information in this document is current as of April, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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property rights of third parties by or arising from the use of NEC Electronics products listed in this document
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granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
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•
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•
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