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2SK3718

Description
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
File Size104KB,5 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3718 Overview

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3718
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3718 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
0.1
–0.05
+0.1
NV =
−117
dB TYP. (V
DS
= 4.5 V, C = 10 pF, R
L
= 1.0 kΩ)
Especially suitable for telephone, cellular phone & audio
Small package SC-89 (TUSM)
1.6 ±0.1
0.8 ±0.1
Low noise
0.4
FEATURES
3
2
1
0.5
0.5
ORDERING INFORMATION
0.5 ±0.05
1.6 ±0.1
PART NUMBER
2SK3718
PACKAGE
SC-89 (TUSM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
−1.0
V)
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
−20
10
10
100
125
−55
to +125
V
V
mA
mA
mW
°C
°C
0.2
+0.1
–0
EQUIVALENT CIRCUIT
2
3
1
1: Source
2: Drain
3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16786EJ2V0DS00 (2nd edition)
Date Published April 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003

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