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2SK3755

Description
SWITCHING N-CHANNEL POWER MOSFET
File Size159KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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2SK3755 Overview

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3755
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3755 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3755
PACKAGE
Isolated TO-220
FEATURES
Super low on-state resistance
R
DS(on)1
= 12 mΩ MAX. (V
GS
= 10 V, I
D
= 23 A)
R
DS(on)2
= 18 mΩ MAX. (V
GS
= 4.5 V, I
D
= 23 A)
Low C
iss
: C
iss
= 1200 pF TYP.
Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
40
±20
±45
±140
24
2.0
150
−55
to +150
23
53
53
V
V
A
A
W
W
°C
°C
A
mJ
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
Note3
I
AS
E
AS
E
AR
Repetitive Avalanche Energy
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 20 V, R
G
= 25
Ω,
V
GS
= 20
0 V
3.
I
AR
23 A, T
ch
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16641EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
2004
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