2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ)
2SK3760
unit：½½
Switching Regulator Applications
3.84±0.2
3.84±0.2
10.5 max
10.5 max
4.7
max
4.7
max
1.3
6.6 max
6.6 max.
1.3
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 1.7Ω (typ.)
High forward transfer admittance: |Y
fs
| = 2.5S (typ.)
Low leakage current: I
DSS
= 100
μA
(V
DS
= 600 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
13.4 min
13.4 min.
3.9 max
3.9 max.
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
A S
I
AR
E
AR
T
ch
T
stg
Pulse (t
=
1 ms)
(Note 1)
Rating
600
600
±30
3.5
14
60
6.3
3.5
6
150
-55~150
W
mJ
A
mJ
°C
°C
Unit
V
V
V
A
15.6
max.
15.6
max
2.7
1.5
max
1.5
max
0.81
max
0.81
0.45
0.45
2.7
2.54
2.54
2.7
1
2
3
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1.
2.
3.
Gate
Drain(HEAT SINK)
Source
JEDEC
JEITA
TOSHIBA
TO-220AB
SC-46
―
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.08
83.3
Unit
°C/W
°C/W
Weight : 2.0g(typ.)
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
0.9 mH, I
AR
=
3.5 A, R
G
=
25
Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
1
2004-02-26
2SK3760
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
∼
400 V, V
GS
=
10 V, I
D
=
3.5 A
−
Duty
<
1%, t
w
=
10
µs
=
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
Y
f s
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
1.8 A
V
OUT
R
L
=
111
Ω
V
DD
∼
200 V
−
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±25
V, V
DS
=
0 V
I
D
= ±10 µA,
V
GS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
1.8 A
V
DS
=
10 V, I
D
=
1.8 A
Min
±30
600
2.0
0.7
Typ.
1.7
2.5
550
6
60
12
45
13
80
16
10
6
Max
±10
100
4.0
2.2
pF
Unit
µA
V
µA
V
V
Ω
S
ns
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
I
DR
=
3.5 A, V
GS
=
0 V
I
DR
=
3.5 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/µs
Min
Typ.
1400
9
Max
3.5
14
−1.7
Unit
A
A
V
ns
µC
Marking
※
※
Lot Number
TYPE
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
K3760
2
2004-02-26
2SK3760
I
D
– V
DS
2
COMMON SOURCE
Tc
=
25°C
PULSE TEST
15,10
8
6
5.5
5
5
15,10
I
D
– V
DS
6
DRAIN CURRENT
D
(A)
I
DRAIN CURRENT
D
(A)
I
8
4
5.5
1.6
4.8
1.2
3
COMMON SOURCE
Tc
=
25°C
PULSE TEST
5
4.6
0.8
4.4
0.4
4.2
VGS
=
4V
0
0
1
2
3
4
5
2
1
4.5
VGS
=
4 V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
DRAIN-SOURCE VOLTAGE V
DS
(V)
4
COMMON SOURCE
20
V
DS
– V
GS
COMMON SOURCE
Tc
=
25℃
16
PULSE TEST
DRAIN CURRENT
D
(A)
I
VDS
=
10 V
3
PULSE TEST
12
2
8
ID
=
3.5 A
Tc
= −55°C
1
100
25
0
0
4
1.8
1
0
0
4
8
12
16
2
4
6
8
10
GATE-SOURCE VOLTAGE V
GS
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
Y
f s
– I
D
FORWARD TRANSFER ADMITTANCE
Y
f s
(S)
10
10
R
DS (ON)
– I
D
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
Tc
=
25°C
PULSE TEST
Tc
= −55°C
25
100
1
VGS
=
10 V½ 15V
COMMON SOURCE
VDS
=
20 V
0.1
0.1
PULSE TEST
1
10
1
0.1
1
10
DRAIN CURRENT
D
(A)
I
DRAIN CURRENT
D
(A)
I
3
2004-02-26
2SK3760
R
DS (ON)
– Tc
10
100
COMMON SOURCE
8
I
DR
– V
DS
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(
Ω)
6
ID
=
3.5A
4
1.8
DRAIN REVERSE CURRENT
I
DR
(A)
VGS
=
10 V
PULSE TEST
1
2
1
10
5
3
−0.4
1
−0.6
VGS
=
0,
−1
V
−0.8
−1.0
−1.2
0
−80
−40
0
40
80
120
160
0.1
0
−0.2
CASE TEMPERATURE Tc (
°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE – V
DS
10000
5
V
th
– T
c
GATE THRESHOLD VOLTAGE
V
th
(V)
CAPACITANCE C (pF)
1000
Ciss
4
3
100
Coss
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
Crss
1
0.1
1
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
CASE TEMPERATURE Tc (
°C)
P
D
– Tc
DRAIN-SOURCE VOLTAGE V
DS
(V)
80
500
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
GATE-SOURCE VOLTAGE V
GS
(V)
20
DRAIN POWER DISSIPATION
P
D
(W)
400
60
VDS
VDD
=
100 V
16
300
200
200
400
COMMON SOURCE
VGS
100
ID
=
3.5 A
Tc
=
25°C
PULSE TEST
0
0
5
10
15
20
12
40
8
20
4
0
0
40
80
120
160
0
25
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE Q (nC)
g
4
2004-02-26
2SK3760
r
th
– t
w
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch-c)
10
1
Duty=0.5
0.2
0.1
0.1
0.02
0.01
0.05
T
Duty
=
t/T
Rth (ch-c)
=
2.08°C/W
0.01
10μ
100μ
1½
10½
100½
1
10
SINGLE PULSE
PDM
t
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
8
E
A S
– T
ch
ID max ( PULSED)
*
AVALANCHE ENERGY
E
A S
(mJ)
6
DRAIN CURRENT
D
(A)
I
10
ID max ( CONTINUOUS)
*
1 ms
*
1
DC OPERATION
Tc
=
25°C
100
µs
*
4
2
※
SINGLE NONREPETITIVE PULSE
0.1
CURVES
Tc=25℃
MUST
BE
DERATED
0
25
50
75
100
125
150
LINEARLY WITH INCREASE IN
TEMPERATURE.
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
VDSS max
100
1000
0.01
1
10
15 V
DRAIN-SOURCE VOLTAGE V
DS
(V)
−15
V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
0.9 mH
WAVE FORM
Å AS
=
1
BVDSS
⋅
L
⋅
I2
⋅
B
2
VDSS
−
VDD
5
2004-02-26
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