DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3794
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3794 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3794
2SK3794-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Low On-state resistance
R
DS(on)1
= 44 mΩ MAX. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 78 mΩ MAX. (V
GS
= 4.0 V, I
D
= 10 A)
•
Low C
iss
: C
iss
= 760 pF TYP.
•
Built-in gate protection diode
•
TO-251/TO-252 package
(TO-252)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±20
±50
30
1.0
150
−55
to +150
15
23
23
V
V
A
A
W
W
°C
°C
A
mJ
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
Note3
I
AS
E
AS
E
AR
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
3.
I
AR
≤
15 A, T
ch
≤
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16778EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004
2SK3794
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.0 V, I
D
= 10 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 10 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
5
2.0
10
35
54
760
150
71
13
170
43
34
2.5
Drain to Source On-state Resistance
44
78
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 10 A
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
17
3.0
4.7
1.0
39
62
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D16778EJ2V0DS
2SK3794
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120 140
160
100
80
60
40
20
0
30
25
20
15
10
5
0
0
20
40
60
80
100
120 140
160
T
C
- Case Temperature -
˚C
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D
- Drain Current - A
100
R V
(at
)
(on
DS
GS
ited )
Lim 0 V
1
=
I
I
D(pulse)
10
ms
PW
D(DC)
1m
10
s
=1
0
µ
0
µ
s
s
10
Po
Lim wer
DC
ite Diss
d
ipa
tio
n
1
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
˚C/W
R
th(ch-A)
= 125
˚C/W
100
10
R
th(ch-C)
= 4.17
˚C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16778EJ2V0DS
3
2SK3794
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
Pulsed
40
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
I
D
- Drain Current - A
100
T
A
=
−55˚C
25˚C
75˚C
150˚C
30
V
GS
=10 V
10
20
4.0 V
1
10
0
0.1
0
1
2
3
4
V
DS
- Drain to Source Voltage - V
1
2
3
4
V
DS
= 10 V
5
6
V
GS
- Gate to Source Voltage - V
V
GS(th)
- Gate to Source Threshold Voltage - V
| y
fs
| - Forward Transfer Admittance - S
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
V
DS
= 10 V
I
D
= 1 mA
2.5
2.0
1.5
1.0
0.5
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
T
A
= 150˚C
75˚C
25˚C
−50˚C
0.1
−50
0
50
100
150
0.01
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
˚C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
Pulsed
70
60
50
40
30
20
10
0
0.1
1
10
100
V
GS
= 4.0 V
10 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16 18 20
V
GS
- Gate to Source Voltage - V
I
D
= 10 A
I
D
- Drain Current - A
4
Data Sheet D16778EJ2V0DS
2SK3794
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
100
80
60
40
20
0
−50
0
50
100
I
D
= 10 A
150
V
GS
= 4.0 V
10 V
Pulsed
C
iss
, C
oss
, C
rss
- Capacitance - pF
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
V
GS
= 0 V
f = 1 MHz
1000
C
iss
100
C
oss
C
rss
10
0.1
1
10
100
T
ch
- Channel Temperature -
˚C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
r
V
DS
- Drain to Source Voltage - V
80
16
14
V
GS
- Gate to Source Voltage - V
t
f
100
t
d(on)
60
V
DD
= 48 V
30 V
12 V
12
10
8
6
40
10
t
d(off)
20
V
DS
V
GS
4
2
I
D
= 20 A
1
0.1
1
10
100
0
0
4
8
12
16
20
24
28
32
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
I
F
- Diode Forward Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
µ
s
V
GS
= 0 V
Pulsed
V
GS
= 10 V
10
0V
1
100
10
0.1
0.01
0
0.5
1.0
1.5
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Drain Foward Current - A
Data Sheet D16778EJ2V0DS
5
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