DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3814 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3814
2SK3814-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 8.7 mΩ MAX. (V
GS
= 10 V, I
D
= 30 A)
R
DS(on)2
= 10.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 30 A)
•
Low C
iss
: C
iss
= 5450 pF TYP.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±60
±240
84
1.0
150
−55
to +150
102
32
102
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-252)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
3.
T
ch(peak)
≤
150°C, R
G
= 25
Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16740EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
2SK3814
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 30 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 30 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
µ
A
nA
V
S
1.5
22
2.0
44
7.0
7.9
5450
550
350
23
8.5
85
7.7
2.5
Drain to Source On-state Resistance
8.7
10.5
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 60 A
I
F
= 60 A, V
GS
= 0 V
I
F
= 60 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
95
17
26
0.95
36
40
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16740EJ1V0DS
2SK3814
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
1000
I
D(pulse)
= 240 A
I
D
- Drain Current - A
R
DS(on)
Limited
(at V
GS
= 10 V)
100
10 ms
100
µs
I
D(DC)
= 60 A
10
Power Dissipation Limited
T
C
= 25°C
Single pulse
DC
1 ms
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 125°C/W
100
10
R
th(ch-C)
= 1.49°C/W
1
0.1
Single pulse
0.01
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16740EJ1V0DS
3
2SK3814
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
300
250
I
D
- Drain Current - A
1000
V
GS
= 10 V
I
D
- Drain Current - A
100
10
1
0.1
200
150
100
50
Pulsed
0
0
1
2
3
4
5
6
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.5 V
T
ch
=
−55°C
25°C
75°C
125°C
150°C
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
0.01
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
4
V
GS(off)
- Gate Cut-off Voltage - V
100
V
DS
= 10 V
Pulsed
10
3.5
3
2.5
2
1.5
1
0.5
0
-75
-25
25
75
V
DS
= 10 V
I
D
= 1 mA
1
T
ch
=
−55°C
25°C
75°C
125°C
150°C
0.1
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
125
175
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
R
DS(on)
- Drain to Source On-state Resistance - mΩ
16
14
12
10
8
6
4
2
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
15
10
V
GS
= 4.5 V
10 V
Pulsed
5
I
D
= 30 A
Pulsed
0
1
10
100
1000
I
D
- Drain Current - A
4
Data Sheet D16740EJ1V0DS
2SK3814
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20
C
iss
, C
oss
, C
rss
- Capacitance - pF
100000
15
V
GS
= 4.5 V
10 V
5
I
D
= 30 A
Pulsed
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
10000
C
iss
10
1000
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
100
10
0.01
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
60
I
D
= 60 A
50
40
30
V
GS
20
10
0
V
DS
V
DD
= 48 V
30 V
12 V
12
10
8
6
4
2
0
100
V
GS
- Gate to Source Voltage - V
t
d(off)
100
t
f
t
d(on)
10
t
r
1
0.1
1
10
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0
20
40
60
80
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1
0.1
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
1000
V
GS
= 10 V
0V
100
10
di/dt = 100 A/µs
V
GS
= 0
1
0.1
1
10
100
I
F
- Diode Forward Current - A
Data Sheet D16740EJ1V0DS
5
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