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2SK3870-01

Description
N-CHANNEL SILICON POWER MOSFET
File Size93KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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2SK3870-01 Overview

N-CHANNEL SILICON POWER MOSFET

2SK3870-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
TO-220AB
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
230
230
40
±160
±30
40
633.1
27
20
5
270
2.02
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1
Note *2
Note *3
Source(S)
Note *1:Tch
<
150°C,Repetitive and Non-repetitive
=
Note *2:StartingTch=25°C,I
AS
=16A,L=4.09mH,
V
CC
=48V,R
G
=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
<
Note *4:I
F
< -I
D
, -di/dt=50A/µs,V
CC
= BV
DSS
,Tch< 150°C
=
=
kV/µs V
DS
< 230V
=
kV/µs Note *4
Tc=25°C
W
Ta=25°C
°C
°C
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=230V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=184V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=20A V
GS
=10V
I
D
=20A
V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MH
V
CC
=180V I
D
=20A
V
GS
=10V
R
GS
=10
V
CC
=115V
I
D
=40A
V
GS
=10V
I
F
=40A V
GS
=0V T
ch
=25°C
I
F
=40A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
230
3.0
Typ.
Max.
5.0
25
250
100
76
Units
V
V
µA
nA
mΩ
S
pF
12
58
24
1880
2820
230
345
12
18
28
42
8.4
12.6
56
84
6
9
42.0
63.0
18.0
27.0
12.0
18.0
1.10
1.50
230
2.5
ns
nC
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.463
62
Units
°C/W
°C/W
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