DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3899-ZK
PACKAGE
TO-263 (MP-25ZK)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 5.3 mΩ MAX. (V
GS
= 10 V, I
D
= 42 A)
R
DS(on)2
= 6.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 42 A)
•
Low C
iss
: C
iss
= 5500 pF TYP.
•
Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
±20
±84
±336
146
1.5
150
−55
to +150
245
49.5
245
V
V
A
A
W
W
°C
°C
mJ
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
µ
H
3.
R
G
= 25
Ω,
T
ch(peak)
≤
150°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17174EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
2SK3899
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 42 A
V
GS
= 10 V, I
D
= 42 A
V
GS
= 4.5 V, I
D
= 42 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 42 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
35
2.0
70
4.2
4.9
5500
1050
350
19
13
91
10
2.5
Drain to Source On-state Resistance
5.3
6.5
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 84 A
I
F
= 84 A, V
GS
= 0 V
I
F
= 84 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
96
18
23.5
0.92
49
70
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D17174EJ1V0DS
2SK3899
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
200
160
120
80
40
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
= 336 A
100
µs
1 ms
10 ms
Power Dissipation Limited
I
D
- Drain Current - A
100
I
D(DC)
= 84 A
10
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
1000
Single pulse
100
R
th(ch-A)
= 83.3°C/W
10
R
th(ch-C)
= 0.86°C/W
1
0.1
0.01
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D17174EJ1V0DS
3
2SK3899
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
400
I
D
- Drain Current - A
I
D
- Drain Current - A
300
V
GS
= 10 V
100
10
1
0.1
0.01
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
6
T
ch
=
−
55°C
25°C
75°C
150°C
4.5 V
200
100
Pulsed
0
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
0.001
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2
1.5
1
0.5
0
-75
-25
25
75
V
DS
= 10 V
I
D
= 1 mA
100
T
ch
=
−55°C
25°C
75°C
150°C
10
1
V
DS
= 10 V
Pulsed
0.1
0.1
1
10
100
125
175
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
12
Pulsed
10
8
6
4
10 V
2
0
1
10
100
1000
V
GS
= 4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
16
12
8
4
0
0
4
8
12
16
20
I
D
= 42 A
Pulsed
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D17174EJ1V0DS
2SK3899
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
12
10
8
6
4
2
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature - °C
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
10000
V
GS
= 4.5 V
1000
10 V
100
C
rss
I
D
= 42 A
Pulsed
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
DD
= 48V
30V
12V
I
D
= 84 A
10
8
V
GS
6
4
V
DS
2
0
0
20
40
60
80
100
50
40
30
20
10
0
100
t
d(off)
t
d(on)
t
r
10
V
DD
= 30 V
V
GS(on)
= 10 V
R
G
= 0
Ω
1
0.1
1
10
100
t
f
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
1000
100
V
GS
= 10 V
10
1
0.1
Pulsed
0.01
0.0
0V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
100
10
di/dt = 100 A/µs
V
GS
= 0 V
1
0.1
1
10
100
0.5
1.0
1.5
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
Data Sheet D17174EJ1V0DS
5
V
GS
- Gate to Source Voltage - V
60
12
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