DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3991
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3991 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3991
2SK3991-ZK
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 13.0 mΩ MAX. (V
GS
= 10 V, I
D
= 15 A)
•
Low C
iss
: C
iss
= 830 pF TYP.
•
5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
25
±20
±30
±120
21
1.0
150
−55
to +150
15
22.5
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 12.5 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17434EJ2V0DS00 (2nd edition)
Date Published February 2005 NS CP(K)
Printed in Japan
The mark
★
shows major revised points.
2005
2SK3991
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 25 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 15 A
V
GS
= 5.0 V, I
D
= 15 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 12.5 V, I
D
= 15 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
µ
A
nA
V
S
2.0
5
2.5
10
10.3
17.4
830
200
140
10
9
26
10
3.0
Drain to Source On-state Resistance
13.0
30.2
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 20 V
V
GS
= 10 V
I
D
= 30 A
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
17
3
6
0.99
23
14
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D17434EJ2V0DS
2SK3991
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
P
T
- Total Power Dissipation - W
20
15
10
5
0
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
★
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
= 120 A
I
D(DC)
= 30 A
I
D
- Drain Current - A
100
PW = 100
µs
10
R
DS(on)
Limited
(at V
GS
= 10 V)
Power Dissipation Limited
1 ms
T
C
= 25°C
Single pulse
10 ms
1
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
★
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R
th(ch-A)
= 125°C/W
100
10
R
th(ch-C)
= 5.95°C/W
1
0.1
Single pulse
0.01
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D17434EJ2V0DS
3
2SK3991
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
150
Pulsed
I
D
- Drain Current - A
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
T
ch
=
−55°C
−25°C
25°C
75°C
125°C
150°C
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
6
100
V
GS
= 10 V
50
5.0 V
0
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
= 10 V
I
D
= 1 mA
| y
fs
| - Forward Transfer Admittance - S
6
V
GS(off)
- Gate Cut-off Voltage - V
5
4
3
2
1
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
Pulsed
25
20
15
10
5
0
1
10
100
1000
I
D
- Drain Current - A
V
GS
= 5.0 V
0.01
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
10
T
ch
=
−55°C
−25°C
25°C
75°C
125°C
150°C
1
0.1
0.1
1
10
100
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
I
D
= 15 A
10
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10 V
4
Data Sheet D17434EJ2V0DS
R
DS(on)
- Drain to Source On-state Resistance - mΩ
2SK3991
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
40
30
V
GS
= 5.0 V
20
10
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
I
D
= 15 A
Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
C
iss
C
oss
100
V
GS
= 0 V
f = 1 MHz
10
0.01
0.1
1
10
100
C
rss
10 V
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
24
I
D
= 30 A
20
16
12
8
4
0
V
DS
V
GS
V
DD
= 20 V
12.5 V
5V
10
8
6
4
2
0
0
5
10
15
20
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
t
rr
- Reverse Recovery Time - ns
12
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
t
d(off)
t
f
t
d(on)
10
t
r
V
DD
= 12.5 V
V
GS
= 10 V
R
G
= 10
Ω
1
0.1
1
10
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
I
F
- Diode Forward Current - A
100
10
1
0.1
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
V
GS
= 10 V
0V
10
di/dt = 100 A/µs
V
GS
= 0
1
1
10
I
F
- Diode Forward Current - A
100
Data Sheet D17434EJ2V0DS
5
京公网安备 11010802033920号
EEWORLD
