DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
2SK4035 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state
resistance and because it is the small size surface mounting
externals, is the best for the high-speed switching usage of the
equipment that promotes the automation of space-saving and
mounting.
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
3
0 to 0.1
1.5
1
2
FEATURES
• Low input capacitance
C
iss
= 74 pF TYP.
• Low on-state resistance
R
DS(on)
= 4.5
Ω
MAX. (V
GS
= 10 V, I
D
= 0.25 A)
• Small and surface mount package (SC-96)
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
2SK4035
2SK4035-A
Note
1. Gate
2. Source
3. Drain
PACKAGE
SC-96 (Mini Mold Thin Type)
SC-96 (Mini Mold Thin Type)
Note
Pb-free (This product does not contain Pb in external
electrode and other parts.)
Marking: XP
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Note1
Drain Current (pulse)
Total Power Dissipation (T
A
= 25°C)
Note2
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
250
±30
±0.5
±2.0
0.2
1.25
150
−55
to +150
V
V
A
A
W
W
°C
°C
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t
≤
5 sec
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17447EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
2SK4035
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 250 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1.0 mA
V
DS
= 10 V, I
D
= 0.25 A
V
GS
= 10 V, I
D
= 0.25 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
V
DD
= 125 V, I
D
= 0.25 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
2.5
0.2
3.5
0.5
3.2
74
16
7
7
5
12
40
4.5
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
4.5
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
V
DD
= 200 V
V
GS
= 10 V
I
D
= 0.5 A
I
F
= 0.5 A, V
GS
= 0 V
I
F
= 0.5 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
4
0.9
2
0.84
42
57
V
F(S-D)
t
rr
Q
rr
Note
Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
D.U.T.
V
GS
0
10%
I
G
= 2 mA
V
GS
90%
R
L
V
DD
V
DD
PG.
90%
90%
10%
10%
50
Ω
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D17447EJ1V0DS
2SK4035
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
P
T
- Total Power Dissipation - W
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
100
80
60
40
20
0
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm,
t
≤
5 sec
FORWARD BIAS SAFE OPERATING AREA
10
I
D(pulse)
I
D
- Drain Current - A
1
10
I
D(DC)
PW
=1
ms
s
m
0m
10
s
R
(a
DS(o
t V
n)
G
S
Lim
=
10 ited
V)
r
we
Po
0.1
n
tio
ipa
ss
Di
Lim
d
ite
0.01
Single pulse
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm
s)
(5
0.001
0.01
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(ch-A)
- Transient Thermal Resistance -
°C/W
1000
Without board
100
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm
10
1
Single pulse
0.1
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet D17447EJ1V0DS
3
2SK4035
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
2
V
GS
= 10 V
Pulsed
I
D
- Drain Current - A
10
1
0.1
0.01
0.001
0.0001
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
1
T
A
=
−55°C
−25°C
25°C
75°C
125°C
150°C
0
0
2
4
6
8
10
V
DS
- Drain to Source Voltage - V
0.00001
0
5
10
15
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
7
6
5
4
3
2
1
0
-75
-25
25
75
125
175
T
ch
- Channel Temperature -
°C
10
V
DS
= 10 V
I
D
= 1 mA
1
T
A
=
−55°C
−25°C
25°C
75°C
125°C
150°C
V
DS
= 10 V
Pulsed
0.1
0.01
0.01
0.1
1
10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
Ω
8
7
6
5
4
3
2
1
0
0.01
0.1
1
10
V
GS
= 10 V
Pulsed
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
V
GS
- Gate to Source Voltage - V
I
D
= 0.25 A
Pulsed
I
D
- Drain Current - A
4
Data Sheet D17447EJ1V0DS
2SK4035
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
8
C
iss
, C
oss
, C
rss
- Capacitance - pF
1000
I
D
= 0.25 A
Pulsed
7
6
5
4
3
2
1
0
-75
100
C
iss
V
GS
= 10 V
10
V
GS
= 0 V
f = 1 MHz
1
0.01
0.1
1
C
rss
C
oss
-25
25
75
125
175
10
100
1000
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
100
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 10 V
V
DD
= 125 V
R
G
= 10
Ω
t
d(off)
200
V
DD
= 200 V
125 V
50 V
10
8
6
150
10
t
d(on)
t
r
t
f
100
V
GS
4
2
50
V
DS
0
I
D
= 0.5 A
1
0.1
1
I
D
- Drain Current - A
0
0
1
2
3
4
5
Q
G
- Gate Charge - nC
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
1000
di/dt = 100 A/µs
V
GS
= 0 V
100
1
0.1
V
GS
= 0 V
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
10
1
0.1
1
I
F
- Diode Forward Current - A
10
Data Sheet D17447EJ1V0DS
5
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