2SK435
Silicon N-Channel Junction FET
Application
Low frequency / High frequency amplifier
Outline
TO-92 (2)
1. Drain
2. Source
3. Gate
3
2
1
2SK435
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
G
Pch
Tch
Tstg
Ratings
22
–22
100
10
300
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source breakdown
voltage
Gate cutoff current
Gate to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note:
Grade
I
DSS
Symbol
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
*
1
y
fs
Ciss
Crss
NF
Min
–22
—
—
6
20
—
—
—
Typ
—
—
—
—
—
9.0
2.8
0.5
Max
—
–10
–2.5
40
—
11.0
4.0
3.0
Unit
V
nA
V
mA
mS
pF
pF
dB
Test conditions
I
G
= –10
µA,
V
DS
= 0
V
GS
= –15 V, V
DS
= 0
V
DS
= 5 V, I
D
= 10
µA
V
DS
= 5 V, V
GS
= 0, Pulse test
V
DS
= 5 V, I
D
= 10 mA,
f = 1kHz
V
DS
= 5 V, V
GS
= 0,
f = 1MHz
V
DS
= 5 V, V
GS
= 0,
f = 1MHz
V
DS
= 5 V, I
D
= 1 mA,
f = 1kHz, Rg = 1kΩ
1. The 2SK435 is grouped by I
DSS
as follows.
B
6 to 14
C
12 to 22
D
18 to 30
E
26 to 40
2
2SK435
Maximum Channel Dissipation Curve
400
Channel Power Dissipation P
ch
(mW)
20
V
GS
= 0V
Typical Output Characteristics
Drain Current I
D
(mA)
16
300
–0.1
–0.2
–0.3
12
200
8
–0.4
–0.5
100
4
–0.6
0
50
100
200
150
Ambient Temperature Ta (°C)
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
20
V
DS
= 5 V
Forward Transfer Admittance
y
fs
(mS)
100
Forward Transfer Admittance
vs. Drain Current
V
DS
= 5 V
f = 1 kHz
10
Drain Current I
D
(mA)
16
12
8
1.0
4
0
–1.25
–1.0 –0.75 –0.5 –0.25
Gate to Source Voltage V
GS
(V)
0
0.1
0.1
1.0
10
Drain Current I
D
(mA)
100
3
2SK435
Forwaed Transfer Admittance
vs. Gate to Source Voltage
50
Gate Cutoff Current I
GSS
(pA)
Forward Transfer Admittance
y
fs
(mS)
V
DS
= 5 V
f = 1 kHz
1,000
V
DS
= 0
100
Gate Cutoff Current
vs. Gate to Source Voltage
40
30
10
20
10
1.0
0
–1.25
0.1
–1.0 –0.75 –0.5 –0.25
Gate to Source Voltage V
GS
(V)
0
0
–10
–20
–30
–40
–50
Gate to Source Voltage V
GS
(V)
Input Capacitance vs.
Drain to Source Voltage
f = 1 MHz
V
GS
= 0
Reverse Transfer Capacitance C
rss
(pF)
100
Input Capacitance C
iss
(pF)
50
100
50
Reverse Transfer Capacitance
vs. Drain to Source Voltage
f = 1 MHz
V
GS
= 0
20
10
5
20
10
5
2
1
0.1
2
1
0.1
0.2
0.5
1.0
2
5
Drain to Source Voltage V
DS
(V)
10
0.2
0.5 1.0
2
5
Drain to Source Voltage V
DS
(V)
10
4
2SK435
Noise Figure vs.
Signal Source Resistance
12
10
8
6
4
2
0
10
V
DS
= 5 V
I
D
= 1mA
f = 1 kHz
Noise Figure NF (dB)
100
1k
10 k
Signal Source Resistance R
g
(Ω)
100 k
Noise Figure vs. Frequency
12
10
8
6
4
2
0
10
V
DS
= 5 V
I
D
= 1mA
Rg = 1 kΩ
Noise Figure NF (dB)
100
1k
10 k
Frequency f (Hz)
100 k
5
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