Silicon MOS FETs (Small Signal)
2SK656
Silicon N-Channel MOS FET
For switching
unit: mm
4.0±0.2
3.0±0.2
0.7±0.1
s
Features
q
High-speed switching
q
Small drive current owing to high input inpedance
q
High electrostatic breakdown voltage
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
200
150
−55
to +150
Unit
V
V
mA
mA
mW
°C
°C
1
2
3
1.27 1.27
1: Source
2: Drain
2.54±0.15
3: Gate
EIAJ: SC-72
New S Type Package
Internal Connection
D
R
1
G
R
2
S
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
OH
V
OL
R
1
+ R
2*1
C
oss
t
on*2
t
off*2
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200Ω
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200Ω
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100µA, V
GS
= 0
I
D
= 100µA, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DD
= 5V, V
GS
= 1V, R
L
= 200Ω
V
DD
= 5V, V
GS
= 5V, R
L
= 200Ω
100
9
4.5
1.1
1
1
20
4.5
1
200
35
40
50
1.5
3.5
50
min
typ
max
10
80
Unit
µA
µA
V
V
Ω
mS
V
V
kΩ
pF
pF
pF
µs
µs
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Turn-off time
*1
*2
Resistance ratio R
1
/R
2
= 1/50
Pulse measurement
2.0±0.2
s
Absolute Maximum Ratings
(Ta = 25°C)
marking
+0.2
0.45–0.1
15.6±0.5
1
Silicon MOS FETs (Small Signal)
P
D
Ta
240
120
Ta=25˚C
200
100
100
2SK656
I
D
V
DS
120
V
DS
=5V
I
D
V
GS
Allowable power dissipation P
D
(mW)
Drain current I
D
(mA)
160
80
Drain current I
D
(mA)
V
GS
=6.0V
5.5V
5.0V
4.5V
40
80
Ta=–25˚C
25˚C
120
60
60
75˚C
80
4.0V
3.5V
3.0V
40
40
20
20
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
0
0
2
4
6
8
10
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
| Y
fs
|
V
GS
50
C
iss
, C
oss
V
DS
Input capacitance (Common source),
Output capacitance (Common source) C
iss
,C
oss
(pF)
V
DS
=5V
Ta=25˚C
V
GS
=0
f=1MHz
Ta=25˚C
C
iss
8
R
DS(on)
V
GS
Drain to source ON-resistance R
DS(on)
(
Ω
)
120
I
D
=20mA
100
12
Forward transfer admittance |Y
fs
| (mS)
40
10
80
30
6
60
Ta=75˚C
20
4
C
oss
40
25˚C
–25˚C
10
2
20
0
0
2
4
6
8
10
0
0.1
0
0
2
4
6
8
10
0.3
1
3
10
30
100
Gate to source voltage V
GS
(V)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
I
O
V
IN
10
3
V
O
=5V
Ta=25˚C
1000
300
V
IN
I
O
V
O
=1V
Ta=25˚C
Output current I
O
(mA)
0.3
0.1
0.03
0.01
0.003
0.001
0
1
2
3
4
5
Input voltage V
IN
(V)
1
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
30
100
Input voltage V
IN
(V)
Output current I
O
(mA)
2
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