Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.1±0.1
s
Features
q
High mutual conductance g
m
q
Low noise type
q
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s
Absolute Maximum Ratings
(Ta = 25°C)
0.2
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
j
T
stg
Ratings
30
−30
20
10
150
125
−55
to +125
Unit
V
V
mA
mA
mW
°C
°C
1: Source
2: Drain
3: Gate
0.9±0.1
0.7±0.1
0 to 0.1
0.2±0.1
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol (Example): 1O
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Symbol
I
DSS*
I
GSS
V
GSC
g
m
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
−30V,
V
DS
= 0
V
DS
= 10V, I
D
= 10µA
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 30V, I
D
= 1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
−
0.1
4
4
14
3.5
60
min
0.5
typ
max
12
−100
−1.5
Unit
mA
nA
V
mS
pF
pF
mV
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NV
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Marking Symbol
0.15
–0.05
+0.1
0.3
–0
+0.1
1
Silicon Junction FETs (Small Signal)
P
D
Ta
240
8
Ta=25˚C
7
200
8.0
2SK662
I
D
V
DS
9.6
V
DS
=10V
I
D
V
GS
Allowable power dissipation P
D
(mW)
Drain current I
D
(mA)
160
V
GS
=0V
5
4
– 0.1V
3
2
1
– 0.2V
– 0.3V
– 0.4V
Drain current I
D
(mA)
6
6.4
120
4.8
80
3.2
Ta=75˚C
1.6
25˚C
–25˚C
40
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
0
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
g
m
V
GS
20
V
DS
=10V
Ta=25˚C
20
g
m
I
D
10
C
iss
, C
oss
V
DS
Input capacitance (Common source),
Output capacitance (Common source) C
iss
,C
oss
(pF)
V
DS
=10V
Ta=25˚C
V
GS
=–3V
f=1MHz
Ta=25˚C
8
Mutual conductance g
m
(mS)
16
Mutual conductance g
m
(mS)
I
DSS
=5mA
16
12
12
2mA
8
6
C
iss
8
I
DSS
=5mA
4
4
2mA
0
– 0.8
4
2
C
oss
0
– 0.6
– 0.4
– 0.2
0
0
1
2
3
4
5
6
7
8
0
1
3
10
30
100
Gate to source voltage V
GS
(V)
Drain current I
D
(mA)
Drain to source voltage V
DS
(V)
C
rss
V
DS
Reverse transfer capacitance (Common source) C
rss
(pF)
5
V
GS
=3V
f=1MHz
Ta=25˚C
4
12
NF
f
V
DS
=10V
I
D
=5.2mA
Ta=25˚C
10
Noise figure NF (dB)
8
3
6
R
g
=500Ω
2
4
1
2
1kΩ
0
1
3
10
30
100
0
10
10
2
10
3
10
4
10
5
Drain to source voltage V
DS
(V)
Frequency f (Hz)
2
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