Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s
Features
q
High-speed switching
q
Small drive current owing to high input inpedance
q
High electrostatic breakdown voltage
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
0 to 0.1
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
20
8
100
200
150
150
−55
to +150
Unit
V
V
mA
mA
mW
°C
°C
0.7±0.1
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3O
Internal Connection
D
R
1
G
R
2
S
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Turn-on time
Turn-off time
*1
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)*3
| Y
fs
|
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100µA, V
GS
= 0
I
D
= 100µA, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
min
40
20
1.5
20
4.5
typ
max
10
80
3.5
50
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta = 25°C)
0.2
0.3
–0
+0.1
Unit
µA
µA
V
V
Ω
mS
V
V
kΩ
µs
µs
V
OH
V
DD
= 5V, V
GS
= 1V, R
L
= 200Ω
V
SL
V
DD
= 5V, V
GS
= 5V, R
L
= 200Ω
*1
R
1
+ R
2
t
on
t
off*2
*2
*2
1
100
200
1
1
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200Ω
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200Ω
*3
Resistance ratio R
1
/R
2
= 1/50
V
out
200Ω
t
on
, t
off
measurement circuit
Pulse measurement
90%
100µF
V
GS
= 5V
50Ω
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
1
Silicon MOS FETs (Small Signal)
P
D
Ta
240
120
Ta=25˚C
200
100
100
2SK665
I
D
V
DS
120
V
DS
=5V
I
D
V
GS
Allowable power dissipation P
D
(mW)
Drain current I
D
(mA)
160
80
Drain current I
D
(mA)
V
GS
=6.0V
5.5V
5.0V
4.5V
40
80
Ta=–25˚C
25˚C
120
60
60
75˚C
80
4.0V
3.5V
3.0V
40
40
20
20
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
0
0
2
4
6
8
10
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
| Y
fs
|
V
GS
50
C
iss
, C
oss
V
DS
Input capacitance (Common source),
Output capacitance (Common source) C
iss
,C
oss
(pF)
V
DS
=5V
Ta=25˚C
V
GS
=0
f=1MHz
Ta=25˚C
C
iss
8
R
DS(on)
V
GS
Drain to source ON-resistance R
DS(on)
(
Ω
)
120
I
D
=20mA
100
12
Forward transfer admittance |Y
fs
| (mS)
40
10
80
30
6
60
Ta=75˚C
20
4
C
oss
40
25˚C
–25˚C
10
2
20
0
0
2
4
6
8
10
0
0.1
0
0
2
4
6
8
10
0.3
1
3
10
30
100
Gate to source voltage V
GS
(V)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
V
IN
I
O
1000
300
V
O
=1V
Ta=25˚C
Input voltage V
IN
(V)
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
30
100
Output current I
O
(mA)
2
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