2SK740
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
D
G
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SK740
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
150
±20
10
40
10
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol Min
V
(BR)DSS
V
(BR)GSS
I
GSS
150
±20
—
—
2.0
—
4.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.12
7.0
1200
550
85
20
50
70
40
1.2
220
Max
—
—
±10
250
4.0
0.15
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Ω
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 120 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V *
1
I
D
= 5 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
2
2SK740
Power vs. Temperature Derating
60
Channel Dissipation Pch (W)
100
Maximum Safe Operation Area
10
Drain Current I
D
(A)
40
10
10
0
µ
s
µ
s
)
)
ot
5°C
2
Sh
s
m
s (1
C
=
1
m
(T
10
ion
t
=
ra
PW
pe
O
C
D
20
1.0
Operation in this area is
limited by R
DS (on)
Ta = 25°C
0.1
0
50
100
Case Temperature T
C
(°C)
150
1
10
100
1,000
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
15V
10 V
8V
16
Drain Current I
D
(A)
Pulse Test
6V
Drain Current I
D
(A)
20
Typical Transfer Characteristics
–25°C
16 V = 10 V
DS
Pulse Test
12
75°C
T
C
= 25°C
12
5.5 V
8
5V
4
V
GS
= 4.5 V
0
4
8
12
16
Drain to Source Voltage V
DS
(V)
20
8
4
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
3
2SK740
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Drain to Source Saturation Voltage
V
DS (on)
(V)
PulseTest
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.5
V
GS
= 10 V
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.1
3
15 V
0.05
Pulse Test
2
I
D
= 10 A
1
5A
2A
0
4
8
12
16
Gate to Source Voltage V
GS
(V)
20
0.02
0.01
0.005
0.5
1.0
2
5
10 20
Drain Current I
D
(A)
50
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
V
GS
= 10 V
Pulse Test
0.4
Forward Transfer Admittance
yfs
(S)
0.5
50
Forward Transfer Admittance
vs. Drain Current
20
10
5
V
GS
= 10 V
Pulse Test
–25°C
Ta = 25°C
75°C
0.3
10 A
0.2
5A
0.1
2A
2
1.0
0.5
0.2
0
–40
0
40
80
120
Case Temperature T
C
(°C)
160
0.5 1.0
2
5
Drain Current I
D
(A)
10
20
4
2SK740
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t
rr
(ns)
10,000
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
1,000
Coss
200
100
50
di/dt = 50 A/µs
V
GS
= 0
Ta = 25°C
Pulse Test
Capacitance C (pF)
20
10
5
0.5
100
Crss
1.0
2
5
10
20
Reverse Drain Current I
DR
(A)
50
10
0
10
20
30
40
Drain to Source Voltage V
DS
(V)
50
Dynamic Input Characteristics
200
Drain to Source Voltage V
DS
(V)
20
Gate to Source Voltage V
GS
(V)
V
DD
= 100 V
50 V
120
25 V
V
DS
V
GS
12
500
Switching Characteristics
V
GS
= 10 V V
DD
= 30 V
PW = 2µs, duty
<
1 %
•
•
Switching Time t (ns)
160
16
200
100
50
t
r
t
d (off)
t
f
t
d (on)
80
8
20
10
5
0.2
40
V
DD
= 100 V
50 V
25 V
8
I
D
= 10 A
4
0
16
24
32
Gate Charge Qg (nc)
0
40
0.5 1.0 2
5
10
Drain Current I
D
(A)
20
5
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