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P4KE24cA

Description
400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
CategoryDiscrete semiconductor    diode   
File Size96KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Download Datasheet Parametric View All

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P4KE24cA Overview

400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL

P4KE24cA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerComchip Technology
Reach Compliance Codecompli
400W Transient Voltage Suppressor
P4KE Series
Stand-off Voltage: 6.8 ~ 440V
Power Dissipation: 440 Walts
Features:
Glass passivated chip
Low leakage
Uni and Bidirection unit
Excellent clamping capability
The plastic material has UL recognition
94V-0
Fast response time
Mechanical Data:
Case: Molded plastic DO-41
Polarity: by cathode band denotes uni-
directional device none cathode band
denoted bi-directional device
Weight: 0.34 gram
.034(.86)
DIA.
.028(.71)
1.0(25.4)
MIN.
.205(5.2)
.160(4.1)
.107(2.7)
DIA.
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
o
VALUE
UNIT
Peak Power Dissipation at T
L
=25 C
T
P
=1ms
(Note 1,2)
P
PK
Minimum 400
Watts
Peak Forward Surge Current, 8.3ms single
Half sine-wave super imposed on rated load
(Note 3)
(JEDEC method)
o
I
FSM
40
A
Steady State Power Dissipation at T
L
=75 C
Maximum lnstantaneous forward voltage
PM
(AV)
1.0
Watts
V
F
at 35A for unidirectional devices only (Note 3)
Operating Junction and Storage Temperature
Range
3.5
V
T
J
, T
STG
o
-55 to +150
o
C
NOTES : (1) Non-repetitive current pulse, per fig. 3 and derated above TA=25 C per fig. 1.
(2) Thermal Resistance junction to ambient.
(3) 8.3ms single half-sine wave duty cycle= 4pulses maximum per minute(unidirectional units only).
“-G” suffix designates RoHS compliant Version
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