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ARF1502

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size115KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

ARF1502 Overview

Transistor

ARF1502 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instruction,
Reach Compliance Codecompliant
S
D
S
ARF1502
D
G
S
ARF1500
BeO
135-05
RF POWER MOSFET
•
Specified 65 Volt, 27.12 MHz Characteristics:
•
Output Power = 900 Watts.
•
Gain = 17dB (Class C)
•
Efficiency > 75%
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
N - CHANNEL ENHANCEMENT MODE
S
G
S
65V
1500W 40MHz
The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial,
medical and industrial RF power generator and amplifier applications up to 40 MHz.
A
IN D
FO VA
R NC
M
ED
AT
IO
N
200
200
70
±30
1500
300
MIN
TYP
•
High Performance Power RF Package.
•
Very High Breakdown for Improved Ruggedness.
•
Low Thermal Resistance.
•
Nitride Passivated Die for Improved Reliability.
All Ratings: T
C
= 25°C unless otherwise specified.
ARF 1500
UNIT
Volts
Amps
Volts
Watts
°C
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 200
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
isolation
V
GS
(TH)
Characteristic / Test Conditions
On State Drain Voltage
1
MAX
UNIT
Volts
µA
nA
mhos
Volts
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
(I
D
(ON)
= 35A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 35A)
RMS Voltage
200
4.0
100
1000
±400
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
8
2500
3
11
5
(60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
Volts
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic (per package unless otherwise noted)
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
UNIT
°C/W
050-5600 Rev - 7-01
0.12
0.09
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA:
EUROPE:
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
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