P4C168, P4C169, P4C170
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 12/15/20/25/35ns (Commercial)
– 20/25/35/45/55/70ns (P4C168 Military)
Low Power Operation (Commercial)
– 715 mW Active
– 193 mW Standby (TTL Input) P4C168
– 83 mW Standby (CMOS Input) P4C168
Single 5V±10% Power Supply
Fully TTL Compatible, Common I/O Ports
Three Options
– P4C168 Low Power Standby Mode
– P4C169 Fast Chip Select Control
– P4C170 Fast Chip Select, Output Enable
Controls
Standard Pinout (JEDEC Approved)
– P4C168: 20-pin DIP, SOJ, LCC, SOIC,
CERPACK, and Flat Pack
– P4C169: 20-pin DIP and SOIC
– P4C170: 22-pin DIP
DESCRIPTION
The P4C168, P4C169 and P4C170 are a family of
16,384-bit ultra high-speed static RAMs organized as 4K
x 4. All three devices have common input/output ports.The
P4C168 enters the standby mode when the chip enable
(CE) control goes HIGH; with CMOS input levels, power
consumption is only 83mW in this mode. Both the P4C169
and the P4C170 offer a fast chip select access time that
is only 67% of the address access time. In addition, the
P4C170 includes an output enable (OE) control to elimi-
nate data bus contention. The RAMs operate from a
single 5V ± 10% tolerance power supply.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby.
The P4C168 and P4C169 are available in 20-pin (P4C170
in 22-pin) 300 mil DIP packages providing excellent
board level densities. The P4C168 is also available in 20-
pin 300 mil SOIC, SOJ, CERPACK, and Flat Pack
packages.
The P4C169 is also available in a 20-pin 300 mil SOIC
package.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
P4C168
P4C169
DIP (P2, C6, D2)
DIP (P2)
SOIC (S2)
SOIC (S2)
SOJ (J2)
CERPACK (F2)
SOLDER SEAL FLAT PACK (FS-2)
P4C170
DIP (P3)
Document #
SRAM107
REV A
1
Revised October 2005
P4C168, P4C169, P4C170
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
– 0.5 to +7
– 0.5 to
V
CC
+0.5
–55 to +125
Unit
V
Symbol
T
BIAS
T
STG
P
T
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
– 55 to +125
– 65 to +150
1.0
50
Unit
°C
°C
W
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING CONDITIONS
Grade
(2)
Commercial
Military
Ambient Temp
0°C to 70°C
–55°C to +125°C
Gnd
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
5
7
pF
pF
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OLC
V
OH
V
OHC
I
LI
I
LO
I
CC
I
SB
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output Low Voltage
(CMOS Load)
Output High Voltage
(TTL Load)
Output High Voltage
(CMOS Load)
Input Leakage Current
Output Leakage Current
Dynamic Operating
Current
Standby Power Supply
Current (TTL Input Levels)
P4C168 only
Standby Power
Supply Current
(CMOS Input Levels)
P4C168 only
V
CC
= Min., I
IN
= –18 mA
I
OL
= +8 mA, V
CC
= Min.
I
OLC
= +100 µA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
I
OHC
= –100 µA, V
CC
= Min.
V
CC
= Max., V
IN
= GND to V
CC
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
Mil.
Comm’l
Mil.
Comm’l
2.4
V
CC
–0.2
–10
–5
–10
–5
___
___
Test Conditions
P4C168/169/170
Min
2.2
–0.5(3)
V
CC
–0.2
–0.5(3)
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
–1.2
0.4
0.2
Unit
V
V
V
V
V
V
V
V
V
+10
+5
+10
+5
130
35
µA
µA
mA
mA
V
CC
= Max., f = Max., Outputs Open
CE
≥
V
IH
, V
CC
= Max., f = Max.,
Outputs Open
CE
≥
V
HC
, V
CC
= Max., f = 0,
Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
I
SB1
___
15
mA
Document #
SRAM107
REV A
Page 2 of 15
P4C168, P4C169, P4C170
AC CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
RC
t
AA
t
AC §
t
AC ‡
t
OH
t
LZ ‡
t
HZ †
t
OE†
t
OLZ †
t
OHZ †
t
RCS
t
RCH
t
PU §
t
PD §
Read Cycle Time
Parameter
-12
-15
-20
-25
-35
Min Max Min Max Min Max Min Max Min Max
12
12
12
8
2
2
7
8
0
6
0
0
0
12
0
0
0
15
0
7
0
0
0
20
2
2
8
10
0
9
0
0
0
25
15
15
15
9
2
2
9
12
0
11
0
0
0
35
20
20
20
12
2
2
10
15
0
15
25
25
25
15
2
2
15
15
35
35
35
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Enable Access Time
Chip Select Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable to Data Valid
Output Enable to Output in Low Z
Output Disable to Output in High Z
Read Command Setup Time
Read Command Hold Time
Chip Enable to Power Up Time
Chip Disable to Power Down Time
AC CHARACTERISTICS—READ CYCLE (CONTINUED)
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
RC
t
AA
t
AC §
t
OH
t
LZ ‡
t
HZ †
t
RCS
t
RCH
t
PU §
t
PD §
Read Cycle Time
Parameter
-45
-55
-70
Min Max Min Max Min Max
45
45
45
2
2
25
0
0
0
45
0
0
0
55
2
2
25
0
0
0
70
55
55
55
2
2
30
70
70
70
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Read Command Setup Time
Read Command Hold Time
Chip Enable to Power Up Time
Chip Disable to Power Down Time
§ P4C168 only
† P4C170 only
‡ Chip Select/Deselect for P4C169 and P4C170
Document #
SRAM107
REV A
Page 3 of 15
P4C168, P4C169, P4C170
TIMING WAVEFORM OF READ CYCLE NO. 1 (ADDRESS CONTROLLED)
(5,6)
Notes:
5.
WE
is HIGH for READ cycle.
6.
CE/CS
and
OE
are LOW for READ cycle.
TIMING WAVEFORM OF READ CYCLE NO. 2 (CE
CS
CONTROLLED)
(5,7)
CE/CS
CE
OE
TIMING WAVEFORM OF READ CYCLE NO. 3—P4C170 ONLY (OE CONTROLLED)
(5)
Notes:
7. ADDRESS must be valid prior to, or coincident with
CE/CS
transition
low. For Fast
CS,
t
AA
must still be met.
8. Transition is measured ±200mV from steady state voltage prior to
change, with loading as specified in Figure 1.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
Document #
SRAM107
REV A
Page 4 of 15
P4C168, P4C169, P4C170
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
WC
t
cw
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Write Cycle Time
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
0
Parameter
-12
-15
-20
-25
-35
Min Max Min Max Min Max Min Max Min Max
12
12
12
0
12
0
7
0
4
0
15
15
15
0
15
0
8
0
5
0
18
18
18
0
18
0
10
0
6
0
20
20
20
0
20
0
10
0
7
0
30
30
30
0
30
0
15
0
13
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE (CONTINUED)
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
WC
t
cw
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Write Cycle Time
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
0
Parameter
-45
-55
-70
Min Max Min Max Min Max
45
40
40
0
40
0
20
3
20
0
55
50
50
0
50
0
20
3
25
0
70
60
60
0
60
0
25
3
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Document #
SRAM107
REV A
Page 5 of 15
Test/Measurement
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