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P4C1026-20CM

Description
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
Categorystorage    storage   
File Size286KB,10 Pages
ManufacturerPyramid Semiconductor Corporation
Websitehttp://www.pyramidsemiconductor.com/
Download Datasheet Parametric View All

P4C1026-20CM Overview

ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM

P4C1026-20CM Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerPyramid Semiconductor Corporation
Parts packaging codeDIP
package instructionDIP, DIP28,.4
Contacts28
Reach Compliance Codecompli
ECCN code3A001.A.2.C
Maximum access time20 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length35.56 mm
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals28
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256KX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.4
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height6.47 mm
Maximum standby current0.00025 A
Minimum standby current2 V
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
P4C1026
ULTRA HIGH SPEED 256K x 4
STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 15/20/25/35 ns (Commercial/Industrial)
– 20/25/35 ns (Military)
Low Power
Single 5V±10% Power Supply
Data Retention with 2.0V Supply
Three-State Outputs
TTL/CMOS Compatible Outputs
Fully TTL Compatible Inputs
Standard Pinout (JEDEC Approved)
– 28-Pin 300 mil SOJ
– 28-Pin 400 mil SOJ
– 28-Pin 400 mil Ceramic DIP
– 32-Pin Ceramic LCC
DESCRIPTION
The P4C1026 is a 1 Meg ultra high speed static RAM
organized as 256K x 4. The CMOS memory requires no clock
or refreshing and has equal access and cycle times. Inputs
and outputs are fully TTL-compatible. The RAM operates
from a single 5V±10% tolerance power supply. With battery
backup, data integrity is maintained for supply voltages down
to 2.0V.
Access times as fast as 15 nanoseconds are available,
permitting greatly enhanced system speeds. CMOS is
utilized to reduce power consumption.
The P4C1026 is available in a 28-pin 300 mil and 400 mil SOJ
packages, as well as Ceramic DIP and LCC packages,
providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
SOJ (J5, J7), DIP (C7)
LCC(L13)
Document #
SRAM127
REV E
1
Revised April 2007
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