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5962-01-389-9520

Description
SRAM Module, 512KX8, 85ns, CMOS, CDIP32
Categorystorage    storage   
File Size531KB,9 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

5962-01-389-9520 Overview

SRAM Module, 512KX8, 85ns, CMOS, CDIP32

5962-01-389-9520 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Reach Compliance Codenot_compliant
Is SamacsysN
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-XDIP-T32
JESD-609 codee0
memory density4194304 bit
Memory IC TypeSRAM MODULE
memory width8
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B (Modified)
Maximum standby current0.0008 A
Minimum standby current2 V
Maximum slew rate0.11 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
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