Balanced Three-chip
SIDACtor®
Device
RoHS
This six-pin SMT package offers a guaranteed balanced protection, based on a Littelfuse
patent (US Patent 4,905,119). The ‘Y’ configuration offers identical metallic and longitudinal
protection all in one package.
SIDACtor Devices
150
150
150
150
150
150
150
150
120
120
di/dt
Amps/µs
500
500
500
1
2
3
6
5
4
SIDACtor
devices enable equipment to comply with various regulatory requirements
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968-A
(formerly known as FCC Part 68).
Electrical Parameters
Part
Number *
P1553U_L
P1803U_L
P2103U_L
P2353U_L
P2703U_L
P3203U_L
P3403U_L
P5103U_L
V
DRM
Volts
130
150
170
200
230
270
300
420
V
DRM
Volts
170
400
V
S
Volts
180
210
250
270
300
350
400
600
V
S
Volts
250
550
V
DRM
Volts
130
150
170
200
230
270
300
420
V
DRM
Volts
50
270
V
S
Volts
180
210
250
270
300
350
400
600
V
S
Volts
80
340
V
T
Volts
8
8
8
8
8
8
8
8
I
DRM
µAmps
5
5
5
5
5
5
5
5
I
S
mAmps
800
800
800
800
800
800
800
800
I
T
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mAmps
Pins 1-3, 1-4
Pins 3-4
Part
Number *
A2106U_3L
**
A5030U_3L
**
Pins 1-3, 1-4
Pins 3-4
V
T
Volts
8
8
I
DRM
µAmps
5
5
I
S
mAmps
800
800
I
T
Amps
2.2
2.2
I
H
mAmps
*
“L” in part number indicates RoHS compliance.
For non-RoHS compliant device, delete “L” from part number.
For individual “UA”, “UB”, and “UC” surge ratings, see table below.
** Asymmetrical
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• Listed
SIDACtor
devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• V
DRM
is measured at I
DRM.
• V
S
is measured at 100 V/µs.
• Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
• Device is designed to meet balance requirements of GTS 8700 and GR 974.
Surge Ratings in Amps
I
PP
Series
0.2x310 * 2x10 *
8x20 *
0.5x700 ** 2x10 ** 1.2x50 **
Amps
A
B
C
20
25
50
Amps
150
250
500
Amps
150
250
400
10x160 *
10x160 **
Amps
90
150
200
10x560 *
10x560 **
Amps
50
100
150
5x320 *
9x720 **
Amps
75
100
200
10x360 * 10x1000 * 5x310 *
I
TSM
10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
Amps
75
125
175
Amps
45
80
100
Amps
75
100
200
Amps
20
30
50
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 31
www.littelfuse.com
Balanced Three-chip SIDACtor® Device
Thermal Considerations
Package
Modified MS-013
6
5
4
1
2
3
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +125
-65 to +150
60
Unit
°C
°C
°C/W
Capacitance Values
pF
Pin 3-4
Tip-Ring
Part Number
P1553UAL
P1553UBL
P1553UCL
P1803UAL
P1803UBL
P1803UCL
P2103UAL
P2103UBL
P2103UCL
P2353UAL
P2353UBL
P2353UCL
P2703UAL
P2703UBL
P2703UCL
P3203UAL
P3203UBL
P3203UCL
P3403UAL
P3403UBL
P3403UCL
P5103UAL
P5103UBL
P5103UCL
A2106UA3L
A2106UB3L
A2106UC3L
A5030UA3L
A5030UB3L
A5030UC3L
MIN
10
25
30
20
25
30
15
20
30
15
20
25
15
20
25
15
20
45
15
15
20
10
15
20
20
20
20
15
15
30
MAX
95
95
95
85
85
85
85
85
85
75
75
75
75
75
75
70
70
70
65
65
65
60
60
60
70
70
70
60
60
60
pF
Pin 1-3 (4-6)
Tip-Ground, Ring-Ground
MIN
10
15
20
10
15
15
10
10
15
10
10
15
10
10
15
10
10
25
10
10
15
10
10
10
10
10
10
10
10
25
MAX
60
60
60
55
55
55
55
55
55
50
50
50
50
50
50
45
45
45
45
45
45
40
40
40
45
45
45
40
40
40
Note: Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias.
www.littelfuse.com
3 - 32
© 2006 Littelfuse • Telecom Design Guide
Balanced Three-chip SIDACtor® Device
+I
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
I
T
I
S
I
H
I
DRM
-V
V
T
V
DRM
V
S
+V
100
Peak
Value
Waveform = t
r
x t
d
50
Half Value
0
0
t
r
t
d
t – Time (µs)
-I
V-I Characteristics
t
r
x t
d
Pulse Waveform
Percent of V
S
Change – %
10
I
H
(T
C
= 25 ˚C)
14
12
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
Telecom Design Guide • © 2006 Littelfuse
3 - 33
www.littelfuse.com
SIDACtor Devices
Embedded System
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