High Surge Current (D-rated)
SIDACtor®
Device
RoHS
¨
DO-214AA
SIDACtor
solid state protection devices with a D surge rating protect
telecommunications equipment located in hostile environments. These
SIDACtor
devices
withstand the simultaneous surges outlined in GR 1089 lightning tests. (See “First Level
Lightning Surge Test” on page 7-5.) Surge ratings are twice that of a device with a C surge
rating. This provides a method for building an SMT version of the balanced ‘Y’ configuration.
(US Patent 4,905,119)
SIDACtor
devices enable equipment to comply with various
regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950,
UL 60950, and TIA-968-A (formerly known as FCC Part 68).
Electrical Parameters
Part
Number *
P0080SDL
P0640SDL
P0720SDL
P0900SDL
P1100SDL
P1300SDL
P1500SDL
P1800SDL
P2300SDL
P2600SDL
P3100SDL
P3500SDL
V
DRM
Volts
6
58
65
75
90
120
140
170
190
220
275
320
V
S
Volts
25
77
88
98
130
160
180
220
260
300
350
400
V
T
Volts
4
4
4
4
4
4
4
4
4
4
4
4
I
DRM
µAmps
5
5
5
5
5
5
5
5
5
5
5
5
I
S
mAmps
800
800
800
800
800
800
800
800
800
800
800
800
I
T
Amps **
2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mAmps
50
50
50
50
50
50
50
50
50
50
50
50
*
“L” in part number indicates RoHS compliance.
For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
** The 2.2 A version cannot be used to meet 4.4 A requirements.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• Listed
SIDACtor
devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• V
DRM
is measured at I
DRM.
• V
S
is measured at 100 V/µs.
• Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
Surge Ratings in Amps
I
PP
Series
0.2x310 * 2x10 *
8x20 *
0.5x700 ** 2x10 ** 1.2x50 **
Amps
D
—
Amps
—
Amps
1000
10x160 *
10x160 **
Amps
—
10x560 *
10x560 **
Amps
—
5x320 *
9x720 **
Amps
—
10x360 * 10x1000 * 5x310 *
I
TSM
10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
Amps
—
Amps
200
Amps
—
Amps
50
di/dt
Amps/µs
1000
* Current waveform in µs
** Voltage waveform in µs
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3 - 10
© 2006 Littelfuse • Telecom Design Guide
High Surge Current (D-rated) SIDACtor® Device
Thermal Considerations
Package
DO-214AA
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +150
-65 to +150
90
Unit
°C
°C
°C/W
Capacitance Values
pF
Part Number
P0080SDL
P0640SDL
P0720SDL
P0900SDL
P1100SDL
P1300SDL
P1500SDL
P1800SDL
P2300SDL
P2600SDL
P3100SDL
P3500SDL
MIN
50
100
100
95
75
65
60
50
50
50
45
45
MAX
110
160
150
140
115
100
90
90
80
75
70
65
Note: Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias.
Telecom Design Guide • © 2006 Littelfuse
3 - 11
www.littelfuse.com
SIDACtor Devices
High Surge Current (D-rated) SIDACtor® Device
+I
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
I
T
I
S
I
H
I
DRM
-V
V
T
V
DRM
V
S
+V
100
Peak
Value
Waveform = t
r
x t
d
50
Half Value
0
0
t
r
t
d
t – Time (µs)
-I
V-I Characteristics
t
r
x t
d
Pulse Waveform
Percent of V
S
Change – %
10
I
H
(T
C
= 25 ˚C)
14
12
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
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© 2006 Littelfuse • Telecom Design Guide
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