1N5444B datasheet, PDF - EEWORLD Datasheet

1N5444B: DescriptionVariable Capacitance Diode, Very High Frequency to Ultra High Frequency, 12pF C(T), 30V, Silicon, Abrupt,; CategoryDiscrete semiconductor diode; File Size60KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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1N5444B Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 12pF C(T), 30V, Silicon, Abrupt,

Parameter Name	Attribute value
Maker	API Technologies
package instruction	O-LALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	GOOD Q
Minimum breakdown voltage	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	2.6
Nominal diode capacitance	12 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	400
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	0.02 µA
Reverse test voltage	25 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Varactor Diode Classification	ABRUPT
Base Number Matches	1

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