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1.5KCD200CR

Description
Transient Suppressor,
CategoryDiscrete semiconductor    diode   
File Size67KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet Parametric View All

1.5KCD200CR Overview

Transient Suppressor,

1.5KCD200CR Parametric

Parameter NameAttribute value
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Base Number Matches1
TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
1.5KCD SERIES
V
RW
: 5.0 - 171 Volts
P
PK
: 1500 Watts
FEATURES :
* Glass passivated junction chip
* 1500W surge capability at 1ms
* Excellent clamping capability
* Low clamping voltage
* Fast response time : typically less
then 1.0 ns from 0 volt to V
BR(min.)
* Pb / RoHS Free
TRANSIENT VOLTAGE
SUPPRESSOR
C3A
3.94
3.18
Anode
1.30
Cathode
0.51
0.38
MECHANICAL DATA
* Case : C3A
* Terminals : Solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Cathode to bigger size slug, For
Anode to bigger size slug use "R" suffix.
* Mounting position : Any
* Weight : 0.11 gram
Dimensions in millimeter
DEVICES FOR BIPOLAR APPLICATIONS
For Bi-directional use C or CA Suffix
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified.
Rating
Peak Power Dissipation at Ta = 25 °C, Tp=1ms (Note1)
Peak Forward Surge Current, 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method) (Note 3)
Operating and Storage Temperature Range
Symbol
P
PK
Value
Minimum 1500
Unit
W
I
FSM
200
A
T
J
, T
STG
- 65 to + 175
°C
Notes :
(1) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25
°
C per Fig. 1
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.
Page 1 of 4
Rev. 00 : January 21, 2010
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