EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

1N916B

Description
0.2A, 100V, SILICON, SIGNAL DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size72KB,1 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric

1N916B Online Shopping

Suppliers Part Number Price MOQ In stock  
1N916B - - View Buy Now

1N916B Overview

0.2A, 100V, SILICON, SIGNAL DIODE, DO-35

1N916B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTexas Instruments
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.63 V
JESD-30 codeO-GALF-W2
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.075 A
Package body materialCERAMIC, GLASS-SEALED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1117  2026  2111  602  932  23  41  43  13  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号