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JANS1N6126US

Description
Trans Voltage Suppressor Diode, 500W, 51.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size40KB,4 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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JANS1N6126US Overview

Trans Voltage Suppressor Diode, 500W, 51.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2

JANS1N6126US Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMTECH
package instructionO-XELF-N2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage61.2 V
Breakdown voltage nominal value68 V
Shell connectionISOLATED
Maximum clamping voltage98 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-XELF-N2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)225
polarityUNIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusQualified
GuidelineMIL-19500/516
Maximum repetitive peak reverse voltage51.7 V
surface mountYES
technologyZENER
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N6102US thru 1N6137US
1N6103AUS thru 1N6137AUS
500W Bipolar Transient Voltage Suppressor Surface Mount (US)
POWER DISCRETES
Description
Quick reference data
V
BR MIN
= 6.12 -180V
V
RWM
= 5.2 - 152V
V
C
(max) = 11 - 273V
I
(BR)
1N6102 - 1N6137 = 5mA - 175mA
Features
Low dynamic impedance
Hermetically sealed non-cavity construction
500 watt peak pulse power
1.5W continuous
These products are qualified to MIL-PRF-19500/516
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX,
JANTXV and JANS versions.
Electrical Specifications
Electrical specifications @ T
A
= 25°C unless otherwise specified.
Device
Type
Minimum
Breakdow n
Voltage
V
(BR)
@ I
(BR)
Volts
Test
Working
Current Pk. Reverse
I
(BR)
Voltage
V
RWM
mA
175
175
175
150
150
150
150
125
125
125
125
100
100
100
100
75
75
75
75
Volts
5.2
5.7
5.7
6.2
6.2
6.9
6.9
7.6
7.6
8.4
8.4
9.1
9.1
9.9
9.9
11.4
11.4
12.2
12.2
Maximum
Reverse
Current
I
R1
µA
100
50
50
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
1
Maximum
Clamping
Voltage
V
C
@ I
P
Volts
11.0
11.8
11.2
12.7
12.1
14.0
13.4
15.2
14.5
16.3
15.6
17.7
16.9
19.0
18.2
21.9
21.0
23.4
22.3
Maximum
Pk. Pulse
Current I
P
T
P
= 1mS
Amps
45.4
42.4
44.6
39.4
41.3
35.7
37.3
32.9
34.5
30.7
32.0
28.2
29.6
26.3
27.5
22.8
23.8
21.4
22.4
Temp.
Coeff. of
V
(BR)
α
(VZ)
% °C
/
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.08
Maximum
Reverse
Current
I
R2
@ 150°C
µA
4,000
750
750
500
500
300
300
200
200
200
200
150
150
150
150
100
100
100
100
www.semtech.com
1N6102
1N6103
1N6103A
1N6104
1N6104A
1N6105
1N6105A
1N6106
1N6106A
1N6107
1N6107A
1N6108
1N6108A
1N6109
1N6109A
1N6110
1N6110A
1N6111
1N6111A
6.12
6.75
7.13
7.38
7.79
8.19
8.65
9.0
9.50
9.9
10.45
10.8
11.4
11.7
12.35
13.5
14.25
14.4
15.2
Revision: February 2010
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