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1.4KESD10CTRE3

Description
Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional,
CategoryDiscrete semiconductor    diode   
File Size173KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

1.4KESD10CTRE3 Overview

Trans Voltage Suppressor Diode, 10V V(RWM), Bidirectional,

1.4KESD10CTRE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum clamping voltage24.7 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage10 V
surface mountNO
Base Number Matches1
1.4KESD5.0 thru 1.4KESD170CA, e3
AXIAL-LEAD TVS
SCOTTSDALE DIVISION
DESCRIPTION
These small axial-leaded TVS devices feature the ability to clamp
dangerous high voltage short-term transients such as produced by directed
or radiated electrostatic discharge phenomena before entering sensitive
component regions of a circuit design. They are small economical transient
voltage suppressors targeted primarily for short-term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as illustrated in Figure #1.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-35
(DO-204AH)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Excellent protection in clamping direct ESD level
transients in excess of 15,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients* of 1400 Watts per MIL-
STD-750, Method 1020 (approx. 150 ns exponential
wave, or one microsecond transients up to 400 watts.
See Figure #1 and #2 for overall transient Peak Pulse
Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5 V to 170 V
Hermetic DO-35 Package. Also available in surface
mount DO-213AA MELF package (see separate data
sheet)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Low inherent capacitance for high-frequency
applications (See Figure #4)
Flexible axial-lead mounting terminals
Bidirectional features available by adding a “C” or
“CA” suffix
MAXIMUM RATINGS
400 Watts for One Microsecond Square Wave or
1400 watts per ESD Wave form of MIL-STD-750,
method 1020.
See Surge Rating curve in Figures #1 and 2.
o
o
Operating and storage temperature –65 C to 175 C
THERMAL RESISTANCE: Less than 250
o
C/W
junction to lead at 0.375 inches from body.
DC power dissipation 500 mW at T
L
= 75
o
C at 3/8
inch (10 mm) lead length from body.
Derate at 2.3 W/
o
C above 25
o
C for P
PP
(1μs) and at
o
o
5 mW/ C above 100 C for dc power.
o
Forward Surge Current 50 amps for 1μs at T
L
= 25 C
(rise time > 100 ns).
MECHANICAL AND PACKAGING
CASE: Hermetically sealed axial-lead glass DO-35
(DO-204AH) package
FINISH: Tin-lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
POLARITY: Banded end is cathode
WEIGHT: 0.2 grams (typical)
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
1.4KESD5.0 thru
1.4KESD170A, e3
Copyright
©
2006
3-29-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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