CRYSTAL OSCILLATORS
Data Sheet 0635J
OE-X8HXXXXX
Precision SC-cut OCXO in 36x27 mm “Europack”
Product Data Sheet
Features
•
•
•
•
•
•
SC-cut crystal
-9
High Stability (up to ± 5x10 )
Low Aging (5x10 /day, 5x10 /year)
Low Phase Noise (-160 dBc/Hz, TYP, floor)
Sine Wave or HCMOS/TTL output
4.8 MHz to 160 MHz Frequencies Available
-10
-8
0.50 (12,7 mm)
0.25 (6,35 mm)
Applications
•
•
•
•
Ø0.030 (0,76 mm) TYP
Specifications:
Systems
Telecommunication
Data Communications
GPS
Instrumentation
0.70 (17,78 mm)
3
1.00 (25,40 mm)
4
2
1.07 (27,20 mm)
Vcc
1
5
1.42 (36,1 mm)
Vc
1
3
DUT
5
4
OUTPUT
Vref 2
10K
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email:
nelsales@nelfc.com
www.nelfc.com
CRYSTAL OSCILLATORS
OE-X8HXXXXX Series
Parameter
Symb
Absolute Maximum Ratings
Vcc
Input Break
Down Voltage
Ts
Storage temper.
Vc
Control Voltage
Electrical
F
Frequency
Frequency stability
∆F/F
Aging
Allan Variance
SSB Phase Noise
Condition
Min
-0.5
-40
-1
4.8
vs. Temp.
vs. Supply
per day
per year
.1s to 10s
1Hz
10 Hz
100 Hz
1 KHz
10 KHz
After 30 minutes
worst direction
4.75
3.15
11.4
10.000
±10
1
5E-10
1E-7
1E-11
-90
-120
-150
-153
-160
Typ
Max
13.0
85
9
160
2
Unit
V
°C
V
MHz
ppb
ppb/V
Data Sheet 0635J
Note
1*
See chart below
after 30 days
5E-8 available2*
All parameters for 10 MHz
dBc/Hz
3*
Retrace
G-sensitivity
Input Voltage
Vcc
steady state, 25°C
W
Standard Operating
steady state, -30°C
Temperature, for Op
start-up @ -30°C
3.2
Temp. 85 °C ad 20%
Subharmonics
-45
dBc
At Higher Frequencies
Spectral Purity
Spurious
-80
Harmonics/Sine
-35
-30
10KOhm//15pF (HCMOS/TTL), 50 Ohm (Sinewave)
Load
to 0.1ppm accuracy
3
5
minutes
3 min. at 12V
Warm-up time
τ
3.3V HCMOS/TTL compatible or Sinewave (+7± 3) dBm
-25dBm Harmonics at sine
Output Waveform
Vc
0
4.0
V
Control voltage
from nominal F
±0.5
±1
ppm
Pull range
Monotonic, posit
0.4
ppm/V
Deviation slope
Vc0
@25°C, Fnom.
1.0
2.0
3.0
V
Setability
Environmental and Mechanical
-30°C to 70°C Standard, Other options – see chart below
Operating temp. range
Per MIL-STD-202, 30G, 11ms
Mechanical Shock
Per MIL-STD-202, 5G to 2000 Hz
Vibration
260°C for 10s Max leads only
Soldering Conditions
Electrical Connections
Pin #1-Vc ; Pin#2 – Vref; Pin #3 – Vcc; Pin #4- Output ; Pin #5- GND;
Pin Out
Power consumption
Notes:
1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic multiplication. Both
methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important – high frequency crystal will be used. If
phase noise close to the carrier and aging are more important – multiplication will be used. Please consult factory for your specific requirement.
2* Aging rate is usually proportional to the operating frequency, unless higher frequency is achieved by multiplication. Keep it in mind
while specifying aging.
3* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency the phase noise
roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency offset range. If higher frequency is
achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to the lower Q of the crystal and is usually worse,
compared to multiplied solution. On the noise floor, however it remains more or less the same. This design usually starts utilizing multiplication
techniques in the range of 25 MHz to 35 MHz.
P
5.0
3.3
12.0
0.8
1.5
2.5
-50
±10
±1.0
5.25
3.45
12.6
1.2
ppb
ppb/G
V
See chart below to specify
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email:
nelsales@nelfc.com
www.nelfc.com
Discrete Device
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