1N5711
SCHOTTKY BARRIER SWITCHING DIODE
SPICE MODEL: 1N5711
Features
·
·
·
·
Ultra-Fast Switching Speed
High Reverse Breakdown Voltage
Low Forward Voltage Drop
Guard Ring Junction Protection
A
B
A
C
D
Mechanical Data
·
·
·
·
·
Case: DO-35, Glass
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Polarity: Cathode Band
Weight: 0.13 grams (approx.)
DO-35
Dim
A
B
C
D
Min
25.40
¾
¾
¾
Max
¾
4.00
0.60
2.00
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
P
d
R
qJA
T
j
T
STG
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
I
R
V
F
C
j
t
rr
Min
70
¾
¾
¾
¾
Max
¾
200
0.41
1.00
2.0
1.0
Unit
V
nA
V
pF
ns
Test Condition
I
R
= 10mA
V
R
= 50V
I
F
= 1.0mA
I
F
= 15mA
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 5.0mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
1N5711
70
49
15
400
300
-55 to +125
-55 to +150
Unit
V
V
mA
mW
°C/W
°C
°C
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note 2)
Forward Voltage Drop (Note 2)
Junction Capacitance
Reverse Recovery Time
Notes:
1. Valid provided that leads are kept at ambient temperature.
2. Short duration test pulse used to minimize self-heating effect.
DS11011 Rev. F-2
1 of 2
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1N5711
ã
Diodes Incorporated
10
100
I
F
, FORWARD CURRENT (mA)
I
F
, FORWARD CURRENT (mA)
80
1.0
60
40
0.1
20
0.01
0
0.5
V
F
, FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
100
T
j
= 150°C
0
1.0
0
0.5
V
F
, FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1
2
T
j
= 25°C
I
R
, REVERSE CURRENT (mA)
T
j
= 100°C
C
j
, CAPACITANCE (pF)
10
T
j
= 125°C
1
T
j
= 75°C
1
T
j
= 50°C
0.1
T
j
= 25°C
0.01
0
10
20
30
40
50
0
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typ. Junction Capacitance vs Reverse Voltage
DS11011 Rev. F-2
2 of 2
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1N5711
Embedded System
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