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1N4006SGB0

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size229KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1N4006SGB0 Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon

1N4006SGB0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfacePure Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
CREAT BY ART
1N4001SG - 1N4007SG
1.0 AMP. Glass Passivated Rectifiers
A-405
Features
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
φ0.6mm
leads
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed: 260℃/10s
Weight: 0.22 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Thermal Resistance
Operating and Storage Temperature Range
Note1: Pulse Test with PW=300 usec, 1% Duty Cycle
@ T
A
=25
@ T
A
=125℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJA
T
J
, T
STG
1N
1N
1N
1N
1N
1N
1N
4001SG 4002SG 4003SG 4004SG 4005SG 4006SG 4007SG
50
100
200
400
600
800
1000
35
50
70
100
140
200
280
400
1
30
1.0
5
100
10
80
- 55 to + 150
420
600
560
800
700
1000
Units
V
V
V
A
A
V
uA
uA
pF
O
Typical Junction Capacitance (Note 2)
C/W
O
C
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:D13

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